多维电场调制功率场效应晶体管辐射效应与加固机理研究

With the miniaturization and efficiency of electronic equipment terminal in space, the performance requirements for power semiconductor are constantly increasing, and the study of relevant theories and key technologies for RAD-hard power MOSFET device is the important problem and hot topic in research area of power semiconductor. The Multi-dimensional Electric-Field Modulated (MEFM) power MOSFET devices are presented and investigated in this project. The electric field modulation theory of MEFM power MOSFET devices is set up and improved, and the breakdown mechanism and analytical model of this kind of device are predicted accurately. Novel MEFM power MOSFETs devices are explored basing on the above theory, and the optimize design of these novel devices are conducted. Novel structures of the MEFM device are proposed to address the reliability problems such as UIS, ESD, and termination degradation. The effect of heavy ion radiation on parasitic transistor and electric field distribution in MEFM power MOSFET device was explored, and made intensive study on the single-event failure mechanisms of these devices. Moreover, new approach and related theory of radiation hardened MEFM power MOSFET were also studied. Research results in this project can address the contradiction between performance requirements and process complexity for the super-junction power MOSFET devices effectively, and will establish theory and experiment foundation for the theory, design and optimization of RAD-hard power semiconductor devices.

随着空间应用背景下电子设备终端小型化和高效化，对功率半导体器件的性能要求不断提高，抗辐射功率MOSFET器件相关理论及其关键技术研究成为该领域的重要问题和研究热点。本项目以新型多维电场调制功率MOSFET器件为研究对象，在完善功率MOSFET电场调制理论基础上，建立器件的击穿机制及电场分布解析模型。基于多维电场调制理论，提出性能优异的功率MOSFET器件新结构，并深入研究器件的辐射效应，探讨辐射效应与UIS、ESD及终端等可靠性问题的耦合作用。通过分析辐射条件对器件寄生晶体管与电场分布的影响，阐明功率MOSFET器件发生单粒子效应的失效机理，提出功率MOSFET器件的抗辐射加固方法。项目的研究成果可望有效解决功率MOSFET等器件在性能要求与结构、工艺复杂度之间的矛盾要求，同时为抗辐射功率半导体器件的理论研究及实现奠定一定的理论和实验基础。

随着空间应用背景下电子设备终端小型化和高效化，对功率半导体器件的性能要求不断提高，抗辐射功率MOSFET器件相关理论及其关键技术研究成为该领域的重要问题和研究热点。本项目以新型多维电场调制功率MOSFET器件为研究对象，在完善功率MOSFET电场调制理论基础上，建立器件的击穿机制及电场分布解析模型。基于多维电场调制理论，提出性能优异的功率MOSFET器件新结构，并深入研究器件的辐射效应，探讨辐射效应与UIS、ESD及终端等可靠性问题的耦合作用。具体内容包括：1）SGE-UMOSFET的单粒子效应模拟研究。2）SGE-UMOSFET的单粒子效应实验研究。3）双沟道分裂栅功率UMOSFET（DC SG-RSO UMOS）模拟研究。4）集成P柱的功率UMOSFET（SGEBP UMOS）模拟研究。SGEBP UMOS的特征导通电阻是最低的，分别比SJ-UMOS和SG-RSO UMOS减小了54.4%和38.1%。然后我们对器件的SEB特性进行了仿真，并在此基础上对SGEBP UMOS进行了P+区扩展以及增加缓冲层的优化设计，使优化结构的SEB阈值达到了击穿电压的83.1%。本项目旨在揭示不同SGE-UMOSFETs结构的性能随不同条件入射粒子的变化规律，为器件退化和失效评估提供依据，为研制粒子辐射加固器件奠定理论和技术基础。通过分析辐射条件对器件寄生晶体管与电场分布的影响，阐明功率MOSFET器件发生单粒子效应的失效机理，提出功率MOSFET器件的抗辐射加固方法。项目的研究成果可望有效解决功率MOSFET等器件在性能要求与结构、工艺复杂度之间的矛盾要求，同时为抗辐射功率半导体器件的理论研究及实现奠定一定的理论和实验基础。