源区致电离辐射对电子器件中子辐射效应影响机制研究

Radiation effect research on electronic devices is a new subject involves nuclear science and semiconductor physics, which is wildly concerned by space and military aspect. Gamma ray exists in neutron radiation environment prodived by nuclear explosion or reactor. Electric devices working in these environments may behave new radiation effects instead of a simple superimposition of gamma induced total ionizing dose effect and neutron induced displacement damage. Based on the research on transistors and integrated circuits of different processes, we proposed three hypothesis: first, the theory of sub-surface energy band bend of bipolar devices, which explains how the total ionizing dose effect influnces the displacement damage; secondly, single radiation effect coupling in circuits theory, which helps to understand the interaction between different units in ICs; thirdly, oxide holes residence theory, which studies the post-neutron total ionizng dose effect behavior. With numercial simulation and experimental validation, the physical mechanism of synergistic radiation effect could be researched, and the relationship between neutron radiation effect affecting by gamma ray and device structure could be obtained. The research will provide principle for electronic devices radiation hardness assurance, and promote this techonology to a higher level.

电子元器件的辐射效应研究是一门涉及核物理和半导体物理等方面的交叉学科，在空间和国防领域中受到广泛关注。γ射线存在于核爆炸和反应堆的中子辐射环境中，由于γ电离辐射与中子位移损伤效应的相互作用，电子器件在实际环境中的辐射效应在某些情况下不是两项辐射效应的简单叠加。本项目以不同工艺单管和集成电路作为研究对象，提出双极器件亚表面区能带弯曲理论，研究电离总剂量效应对位移损伤效应的影响过程；提出单项辐射效应电路级耦合机制，研究集成电路单元间的耦合作用对整体电路参数的影响；提出氧化物空位驻留理论，研究中子在氧化层内产生缺陷对电离辐射效应电子空穴漂移过程的影响因素。通过数值模拟和实验验证，研究综合辐射效应的物理机理。掌握元器件致电离辐射下中子辐射效应与器件结构的关系，对致电离辐射下中子辐射效应给出科学合理的解释，为我国电子元器件抗辐射加固设计和评价提供理论依据，促进抗辐射加固技术向更高层次、更高水发展。

项目从试验研究、数值模拟两方面对双极、CMOS、BiMOS三种不同工艺器件开展了中子、γ综合辐射效应规律和物理机理研究。通过研究，一方面阐明了横向PNP晶体管亚表面区能带弯曲造成的载流子复合加剧是引起双极工艺器件出现加剧退化、导致非预期失效的主要原因，揭示了中子位移效应和γ电离总剂量效应耦合的物理机理，为电子元器件中子、γ综合辐射效应试验相关国家标准提供了理论依据；另一方面阐明了中子、γ综合辐射效应与双极工艺器件输入级晶体管结构的关系，掌握了双极、BiCMOS工艺器件中子位移效应和γ射线电离总剂量效应电路级耦合的产生条件，为电子元器件抗辐射加固设计和器件选型提供了依据，并依此建立了双极器件工艺加固方法。同时在研究过程中，项目组发展出多种辐射效应敏感参数测试方法。