纳米级电子束直写曝光的基础工艺研究

The fudumental nano-level direct writing e-beam lithography technology was processed, and the pattern which size is below 100nm was successfully finished by e-beam lithography. The process-modified technology was used to corerct proximity effect, which guaranteed the e-beam lithography can keep in nano-level resolution. Meanwhile, the nano-level direct writing e-beam lithography technology was employed to fabracated CMOS and GaAs nano-level device. This research provides the technical basis to the nano-device's research, and it is meaningful to our nano-engineering.

对纳米级电子束直写曝光工艺进行研究,实现100nm以下电子束曝光.用工艺补偿进行邻近效.应修正,使得电子束加工的分辨率在纳米量级.同时将该技术应用于纳米材料生长.为我国纳米级超微细加工及量子功能器件的研究提供技术基础.对微波器件,超高速电路,量子功能骷臀⒒翟骷约靶陆峁?新器件的研究具有重大而深远的意义.