用于深亚微米投射式电子束曝光的磁浸没透镜研究

A possibly new approach for integrated technology of submicron ULSI is studied. Immersion magnetic and combined magnetic-electrostatic electron lenses are proposed for projection electron beam lithography systems used for submicron and nanometer integration technology. As there is no beam crossover in this lens, the severe stochastic Coulomb interaction, which is one of limitation for the resolution and record velocity of the lithography process, is prevented and a higher resolution and record speed can be expected. The wide beam and curvilinear-axis electron optical imaging and aberration theory is presented and its analysis and numerical calculation method is studied. Differential algebra method is used for analysis of high-order aberration of the immersion magnetic lenses. Calculation algorithm and software are developed and a high resolution demagnified combined immersion magnetic-electrostatic lens system has been optimally designed. An electron beam bench has been developed for experimental research of the new lens system and for proving its electron optical properties.

研究用于深亚微米和纳米投射式电子束曝光系统的新型复合磁浸没/静电透镜，它避免了发谑乃婊饴叵嗷プ饔茫岣吡朔直媛始凹锹妓俣取Ｑ芯空庵滞妇档目硎蟛罾砺奂凹扑愫陀呕椒ǎ芯考扑愀呓紫蟛畹奈⒎执砺酆退惴ㄈ砑挥呕杓扑醣兜摹⑽尴笞堑耐渡淦毓馔妇迪低常谎兄贫笛橄低常性硎笛椋な敌缕毓庀低秤τ每赡苄浴