大面积、电流型GaN辐射探测器件制备及性能研究

GaN is a new generation wide bandgap semiconductor material, GaN-based radiation detector has preeminent properties such as high radiation resistance, fast response time, low leakage current, and is suitable to work in harsh environment. It is one of the ideal devices used in intense pulsed radiation field detection, space radiation detection and space communication. Limited by the technique of high-quality GaN single crystal material growth, development of GaN pulsed radiation detector and GaN pulsed radiation detection technology, especially study on influence of polarization effect and radiation damage of GaN material on device operation mechanism has not been explored yet. This seriously impedes the development and application of GaN pulsed radiation detection technology. In this project, we propose growth of GaN single crystal material with low defect density and large size, based on this GaN single crystal material, we develop current-type large-size pulsed radiation detector of diameter above 30mm, study radiation detection technology used in intense pulsed radiation field systematically, and we also study the influence of polarization effect and radiation damage on charge collection efficiency and detection performance simultaneously. This research will provide scientific basis for pulsed radiation technology using GaN material.

GaN是新一代宽禁带半导体材料，基于GaN材料的辐射探测器件具有耐辐照能力强、时间响应快、漏电流小、可在恶劣环境中工作等卓越性能，是强流脉冲辐射场探测、空间辐射探测、空间通信的理想器件。然而，高质量GaN单晶材料生长工艺的制约，严重影响了GaN脉冲辐射探测技术的发展和应用，特别是GaN材料极化效应、辐照损伤效应对器件工作机理影响的研究目前尚未见报道。本课题提出生长低缺陷密度的大面积GaN单晶材料，基此研制直径30mm以上的电流型GaN辐射探测器，系统开展其用于强流脉冲辐射场探测技术研究，同时研究其内极化特性、辐照损伤对器件电荷收集效率及辐射探测性能的影响，为GaN材料用于脉冲辐射场探测提供科学依据。

GaN是新一代宽禁带半导体材料，基于GaN材料的辐射探测器件具有耐辐照能力强、时间响应快、漏电流小、可在恶劣环境中工作等卓越性能，是强流脉冲辐射场探测、空间辐射探测、反应堆辐射场监测的理想器件。本项目提出生长低缺陷密度的大面积GaN单晶材料，基此研制直径30 mm以上的电流型GaN辐射探测器，系统开展其用于脉冲辐射场探测技术研究，同时研究其内极化特性、辐照损伤对器件电荷收集效率及辐射探测性能的影响，为GaN材料用于脉冲辐射场探测提供科学依据。