范德华外延生长二维黑磷及其室温宽波段光探测器应用研究

Black phosphorus (BP), a novel two-dimensional (2D) semiconductor with 0.3-1.5 eV tunable direct bandgap and high mobility, exhibits great potential to overcome the limits of traditional semiconductor materials in the photodetector applications, which encounters the challenges within the detecting wavelength range, photoresponse performance and the device feature dimension. In this project, van der Waals epitaxy growth of high-crystallinity 2D BP film on insulating substrates as well as its rational doping is proposed to be developed through chemical vapor transport method. The nucleation mechanism and epitactic dynamics of the BP growth together with the atomic doping effect on its bandstrucure and transport properties is to be explored. The construction of built-in-field in designing the photodetector device structure is about to be investigated to reduce the dark current and hence optimizing the ignal-to-noise ratio of the device. And, plasmonic structure is going to be introduced to enhance the broadband optic absorbance and further photodetecting performance. The success of this project will provide theoretical and experimental basis for exploring photodetecting materials featured with broadband, high speed and high responsivity, and also be significant for the further development of the 2D semiconductor materials including BP in optoelctronic device applications.

黑磷是一种新型二维半导体材料，具有0.3-1.5 eV可调谐的直接带隙、高载流子迁移率等优异性能，有望突破传统光探测材料在探测波长范围、光电响应性能、集成度等方面的限制，在室温宽波段光探测器的应用和发展方面具有巨大的潜力。本项目提出采用化学气相输运法获得高结晶性二维黑磷的范德华外延生长与掺杂调控，研究基底上黑磷成核、范德华外延动力学机制以及原子掺杂调控黑磷能带结构与输运性质；利用内建电场和表面等离激元结构构筑抑制黑磷光探测器的暗电流以及优化室温宽波段光响应性能，探究器件结构设计、信噪比和响应率性能的优化策略。本项目的顺利实施对开发宽波段、高速、高响应率光探测材料以及推动黑磷等二维半导体材料于新型光电子器件的应用发展具有重要的理论和实践指导意义。

光探测器是光电信息技术中的核心器件，对新型光电探测材料的开发是探测器实现性能突破的关键。作为一种新型二维半导体材料，黑磷在拓展光探测器的探测波长范围、提升光电响应性能等方面具有潜力。本项目重点关注面向光探测器应用的窄带隙二维材料生长与器件开发，旨在通过研究黑磷等窄带隙二维半导体材料范德华外延中的结构与能带调控及其对光探测器性能的影响，攻克光电探测器光谱覆盖范围、室温响应性能等难题。通过项目的实施，在大尺寸高质量黑磷等窄带隙二维半导体薄膜生长、室温高灵敏光电探测等光电器件的研究取得了系列创新性成果。采用化学气相输运法,实现介质基底上高质量二维黑磷薄膜的可控生长制备，晶畴尺寸达亚厘米，室温载流子迁移率大于10^3 cm2 V-1s-1。在此基础上，研制出具有室温宽波段响应、高响应度与高信噪比的二维黑磷光探测器，探测波长覆盖可见光到远红外波段，其中在太赫兹波段的光响应噪声等效功率低于15 pW Hz−1/2。基于项目执行期内的相关成果，项目负责人以通讯作者在重要学术期刊共发表学术论文41篇，影响因子大于10的文章12篇，申请发明专利23项，授权13项。本项目的实施推动了黑磷等窄带隙二维半导体材料的高质量制备以及在光探测器件中的应用。