纳米尺度器件中的电热耦合分析及模拟研究

Stress analysis, quantum confinement effect and heat conduction from transistors and interconnects are the critical design considerations for.computing below the 20nm milestone. This project will face the emerging new challenges due to the aggressive scaling-down in the 3D transistor era, will explore the detailed heat generation and transport mechanisms in novel structure devices with a focus on the non-equilibrium behavior of electrons and phonons. Fully coupled and self-consistent quasi-ballistic phonon and electron transport simulations including physical based scattering mechanisms will be developed in order to examine the departure from equilibrium within the phonon system and its relevance for properly simulating the electrical behavior of devices. Stress analysis and quantum confinement effect for arbitrary geometrical structure will be introduced and different materials will be included in this project. After verifying the developed simulator, heat generation, heat conduction and carrier transport in a variety of novel devices will be examined at the presence of different kind of stresses, and analytical models will be proposed accordingly. Electro-thermal optimization strategy will be proposed based on the simulation results and analytical models, which is helpful and significant for the further novel device and ULSI circuit design.

本课题面向超大规模集成电路中主流纳米尺度器件以及未来器件持续缩小所面临的新挑战；研究在量子约束和应力条件下新结构器件中载流子输运特性、输运模型；建立纳米尺度下低维输运模型和包含各种散射机制的准确的模拟方法；研究纳米尺度器件中的热产生机理、模型以及各种新结构器件中的声子非稳态输运过程；探索在量子约束条件下声子输运对载流子输运特性的影响；发展一套电学、热学特性耦合的模拟方法并提出相应的解析模型。在上述模型和模拟方法的基础之上，评估新结构、新材料器件中的产热、散热问题，研究量子约束体系下应力对电学和热学特性的影响，开展纳米尺度下电学热学性能最优化的设计方法研究，为我国集成电路科学技术可持续发展奠定理论基础。

本课题面向超大规模集成电路中主流纳米尺度器件以及未来器件持续缩小所面临的新挑战，发展了一套电热耦合的模拟方法并开发了相应的三维模拟器，提出相应的简约模型。经过大量验证表明该方法和简约模型与实验结果或理论计算非常吻合，能够使用适用于当前主流的纳米尺度器件以及未来技术节点的仿真需求。在完成上述三维电热耦合模拟器和简约模型的基础之上，项目组评估了14nm技术节点中的产热、散热问题，研究了稳定对于纳米尺度器件电学特性的影响，计算了FinFET器件准弹道输运下的产热和自热效应，并开展了纳米尺度下电学热学性能优化设计方法研究，提出了四点自热效应优化设计规则，为未来集成电路技术进一步发展提供了一些理论依据。