富铜的铜铟镓硒电池吸收层的研究

It is important to investigate and solve the scientific and engineering problems of CIGS solar cells, which can be helpful for enhancing the photo-electronic conversion efficiency of CIGS solar cells, ensuring the technical independence and leadership of our country in the photovoltaic field, and relieving the energy shortage and the pollution problems. Cu-rich CIGS has the low defect density, the high mobility and the low carrier combination level, which make it a better absorb layer for solar cells than the Cu-poor CIGS. However, the presence of Cu2Se on the surface of Cu-rich CIGS turns the surface into the carrier combination center and consequently limits the efficiency of the Cu-rich CIGS solar cells. The key issue is removing Cu2Se for increasing the efficiency of Cu-rich CIGS solar cells. KCN is the current available Cu2Se etching agent which is highly toxic. Therefore, we propose the four-step sputtering method (1. Growth of CIGS in the Cu-rich condition; 2. annealing the CIGS in Se-rich atmosphere; 3. deposition of (In,Ga)2Se3 on the CIGS surface; and 4. annealing the (In,Ga)2Se3/CIGS stacks in Se-rich atmosphere.) and the physical etching, such as ion beam bombardment and high-resolution polishing, to remove Cu2Se from the surface of Cu-rich CIGS. The aim of this proposal is to fabricate a Cu-rich CIGS solar cell with a high photo-electric conversion efficiency.

研究和解决铜铟镓硒（CIGS）电池的基础科学与工程技术问题，有助于提高其光电转化效率，保证我国在光伏领域的技术独立性和领先性，缓解能源短缺和环境污染问题。富铜CIGS具有缺陷密度低、迁移率高、载流子复合率低等优点，相比于贫铜CIGS，更适合作为太阳能电池的吸收层材料。限制其光电转化能力的主要问题在于富铜CIGS表面存在Cu2Se导电相，使其表面成为载流子复合的中心。去除Cu2Se是提高富铜CIGS电池效率的关键。现有的Cu2Se刻蚀剂是剧毒的KCN。针对这个问题，本研究提出磁控溅射四步法(1.富铜条件下制备CIGS；2.富Se气氛下退火CIGS；3.在CIGS表面沉积(In,Ga)2Se3层；4.(In,Ga)2Se3/CIGS叠层薄膜在富Se气氛中退火。)以及采用离子束轰击或高精度抛光等物理刻蚀方法，除去CIGS表面的Cu2Se。本研究的目标是制备一个高效率的富铜CIGS电池。

研究和解决铜铟镓硒（CIGS）电池的基础科学与工程技术问题，有助于提高其光电转化效率，保证我国在光伏领域的技术独立性和领先性，缓解能源短缺和环境污染问题。富铜CIGS具有缺陷密度低、迁移率高、载流子复合率低等优点，相比于贫铜CIGS，更适合作为太阳能电池的吸收层材料。限制其光电转化能力的主要问题在于富铜CIGS表面存在Cu2Se导电相，使其表面成为载流子复合的中心。去除Cu2Se是提高富铜CIGS电池效率的关键。现有的Cu2Se刻蚀剂是剧毒的KCN。针对这个问题，本研究提出磁控溅射四步法(1.富铜条件下制备CIGS；2.富Se气氛下退火CIGS；3.在CIGS表面沉积(In,Ga)2Se3层；4.(In,Ga)2Se3/CIGS叠层薄膜在富Se气氛中退火。)以及采用离子束轰击或高精度抛光等物理刻蚀方法，除去CIGS表面的Cu2Se。本研究的目标是制备一个高效率的富铜CIGS电池。