金属-半导体二维材料异质结图案化生长及高性能电子和光电子器件构筑

According to Moore's law, silicon based micro-electronic technique has rapidly developed for several decades. But now, with the feature size down to ten nanometers, the micro-electronic industry can no longer step forward by simply following the Moore's law of increasing the number of transistors. New types of devices with low power consumption and thin channel are expected to continue the existence of Moore's law, making the integrated circuits with smaller size and higher density. In recent years, new types of electronic and optoelectronic devices based on 2D materials are widely studied and show great potential in practical applications. However, due to the contact problem between the metal electrode and the conduction channel, it still remains a big challenge to realize electronic and optoelectronic devices with high mobility and high responsivity. In this project, we propose the designing of large areas of patterned growth of 2D metal-semiconductor heterostructures with specific band alignment through chemical vapor deposition method. In this way, we can avoid the potential contact barrier between the 2D conduction channel and the metal electrodes, resulting in the effective injection of electrons and holes, which will largely increase the performance of the designed 2D materials-based electronic and optoelectronic devices. These studies are expected to be helpful for applications of 2D materials on modern photo-electrical interconnection circuits.

以硅为主的微电子技术已按照“摩尔定律”实现了几十年的飞速发展，但随着特征尺寸减小到十纳米以下，微电子产业已经不能再按照靠增加单位面积芯片上晶体管数目的“摩尔定律”向前发展。而低功耗、超薄沟道的新型器件被认为有望延续摩尔定律存在空间，得到更小尺寸、更高密度的集成电路。近年来，基于二维材料的新型电子及光电子器件被广泛研究并表现出很大潜力。但是由于二维材料的接触问题，设计制备面向应用的具有高迁移率及高光电响应的电子以及光电子器件仍然是一个重大的挑战。本项目拟设计具有特殊能带排列的金属-半导体二维材料异质结结构，通过全化学气相沉积技术实现这类二维材料异质结的图案化生长，利用金属电极-金属二维材料-半导体二维材料器件结构引入的有效电子注入方式，减小或避免沟道层二维材料与电极之间的接触势垒及接触电阻，构建具有优异性能的二维材料电子及光电子器件，为二维材料在新一代微电子电路中的应用做出贡献。

以CMOS为主的微电子技术已按照“摩尔定律”实现了几十年的飞速发展，但随着特征尺寸减小到十纳米以下，微电子产业已经不能再按照靠增加单位面积芯片上晶体管数目的“摩尔定律”向前发展。而低功耗、超薄沟道的新型器件被认为有望延续摩尔定律存在空间，得到更小尺寸、更高密度的集成电路。基于这一思想，二维层状半导体由于其自身具有原子级厚度，在保证特征尺寸大大减小的同时又能有效避免短沟道效应对器件的影响，从而受到了极大的关注。.通过硅材料的发展历程可以看出，二维材料应用于电子或光电子电路，不可避免要与金属接触，如何克服或者减小金属与二维材料之间的肖特基势垒及接触电阻，实现载流子有效注入与传输，从而提高器件的性能，降低成本和功率损耗成为目前二维材料的研究重点之一。.本项目聚焦金属、半导体及异质结可控制备研究，系统研究了金属二维材料对半导体二维材料的接触改善作用，有效克服了传统金属热蒸发或磁控溅射蒸镀电极方法对二维材料表面和内部结构造成不可逆破坏,实现了高性能晶体管器件。同时基于接触调控思想，进一步开发了高性能光探测器、多功能存算一体器件、神经突触等器件应用。申请人以第一或通讯作者身份在Nature Electronics、Advanced Materials、Light: Science & Applications等上发表SCI论文19篇，包括受邀综述论文2篇，授权发明专利2项。系列研究对推动二维材料在电子、光电子器件领域的应用奠定了重要基础。