高性能二极管驱动相变存储器模型及可微缩性研究

Phase-change random access memory (PCRAM), as novel non-volatile memory providing high density, low power consumption and pretty good process compatibility, has attracted more attention in the international semiconductor industry. And 1D1R (including a diode and a PCM cell) structure is considered to be best approach to achieving high density storage. In this proposal, combining with device modeling, fabrication and theoretical analysis, an original dual-trench epitaxial diode array TCAD model has been established to investigate diode array drivability, reverse leakage, cross-talk characteristics and parasitic effect. Furthermore, the reciprocal effect between epitaxial diode array and CMOS process are investigated by physical modeling to guarantee the process compatibility. Herein, we focused on nano effect and device scalability in 4F2 epitaxial diode array accessing PCRAM to illuminate device characteristics in the next generation. This 1D1R structure is the most promising scheme to fulfill high performance PCRAM application, with many advantages of high density, low power consumption, low process complexity and compatible with CMOS technology.

相变存储器（Phase-change Random Access Memory，PCRAM）作为新型非易失性存储技术，具有高密度、低功耗、良好的工艺兼容性等优势，一直以来都是国际上存储技术研究的热点，1D1R（1个二极管和1个可逆电阻）是实现高密度存储器的最佳途径。本项目采用器件建模、流片实验和理论分析相结合的技术路线，以自主型高密度外延双沟道隔离二极管驱动器件为重点研究对象，结合40nm标准CMOS制程在TCAD平台上搭建二极管驱动阵列的物理模型，研究器件驱动能力、开关特性、串扰特性和寄生效应，并研究二极管阵列与外围CMOS电路工艺制程之间交互影响的物理物理机理。在此基础上研究4F2外延双沟道隔离二极管阵列的纳米尺寸效应和器件可微缩性，阐明下一代PCRAM的性能趋势，有望在高密度、低功耗、工艺简单和与CMOS工艺兼容性好等方面发挥优势。

相变存储器（Phase-change Random Access Memory，PCRAM）作为新型非易失性存储技术，具有高密度、低功耗、良好的工艺兼容性等优势，一直以来都是国际上存储技术研究的热点，1D1R（1个二极管和1个可逆电阻）是实现高密度存储器的最佳途径。本项目采用器件建模、流片实验和理论分析相结合的技术路线，以自主型高密度外延双沟道隔离二极管驱动器件为重点研究对象，结合40nm标准CMOS制程在TCAD平台上搭建二极管驱动阵列的物理模型，研究器件驱动能力、开关特性、串扰特性和寄生效应，并研究二极管阵列与外围CMOS电路工艺制程之间交互影响的物理物理机理。在此基础上研究4F2外延双沟道隔离二极管阵列的纳米尺寸效应和器件可微缩性，阐明下一代PCRAM的性能趋势，有望在高密度、低功耗、工艺简单和与CMOS工艺兼容性好等方面发挥优势。