偏振集成中红外探测器近场调控抑制邻近像元响应串扰研究

Infrared polarization detection technology can effectively increase the difference between target and background by using the increased polarization dimension, which will improve the ability of target detection and recognition. It has important application value in the fields of precision medicine, visual inspection, identification and authenticity, and remote sensing, and is one of the leading hotspots and important directions in the field of international infrared optoelectronics research. We will focus on the prominent problem of adjacent pixels crosstalk revolve around a monolithic polarization-integrated mid-infrared detector based on InAs/GaSb II superlattice material system, explore the physical mechanism that causes the response crosstalk between adjacent pixels, and build the relevant multi-physics field simulation model. Through the design and optimization of different surface polarization microstructures, including shape, array period, line width, thickness, etc., the near-field distribution of light in different polarization states in the pixel can be controlled, and the crosstalk of adjacent pixels can be effectively suppressed, thereby the predicted high extinction ratio polarization-integrated unit device and line- array device will be obtained and verified. This project will provide a strong theoretical basis and technical supporting for the new generation of single-chip polarization-integrated infrared detection and imaging.

红外偏振探测技术利用增加的偏振维度，可以有效增大目标与背景的差异，提高目标探测与识别能力，在精准医疗、视觉检测、识别真伪、对地遥感等领域具有重要的应用价值，是国际上红外光电子领域研究的前沿热点和重要方向之一。项目将围绕基于InAs/GaSb Ⅱ类超晶格材料体系的单片偏振集成中红外探测器存在邻近像元响应串扰的突出问题，探究引起邻近像元间响应串扰内在的物理机理，建立相关的物理模型。通过不同表面偏振微结构设计优化,包括形状、周期、线宽、厚度等，有效调控不同偏振态光在像元内的近场分布，实现邻近像元响应串扰的抑制，从而获得高消光比偏振集成器件，并且进行相关材料和单元器件、线列器件的制备及性能验证。本项目将为新一代单片偏振集成红外探测及成像提供强有力的理论基础和技术支撑。

通过超表面偏振分光结构与红外探测器集成获取目标辐射或传输过程中的偏振信息近年来成为国际研究的前沿和热点。与传统的偏振探测器相比，偏振集成红外探测器可以在相当大地程度上克服以上系统级红外偏振探测器的缺点，可以同时同地对同一动态目标进行偏振成像，偏振图像信息处理时无需进行配准直接融合。偏振集成探测器同时具备体积小、重量低以及能耗低的特点，极大地拓宽了其应用范围，正在成为第四代新型光电成像技术的重要载体之一。.本项目通过亚波长金属光栅结构实现入射光与InAs/GaSb II 类超晶格红外探测器的耦合增强与偏振选择调控，理清了偏振集成探测器的串扰机理，从结构设计和实验制备上突破了偏振器件工艺制备关键技术，获得了中波4x4偏振集成器件，器件的截止波长为4.9μm，3-5μm波长范围内器件的最小消光比为13.8：1；另外研制了线列长波偏振集成器件，器件截止波长为10.65μm，三个通道最小消光比45：1，为满足未来应用需求的高消光比像素级偏振集成探测器的发展打下了坚实的基础。