离子注入增强（AlGa）InP量子阱界面混合及其特性研究

In this project we explored the interface intermixing effects in multiple quantum well structures induced by three methods, i.e. ion implantation, surface sputtering and pulse laser radiation. We mainly studied the enhanced diffusion effect in the quantum well interface by rapid annealing procedure. The stress in ion-implantated heterostructure was evaluated. The strain level for ion implantation, surface sputtering and pulse laser radiation multiple quantum well materials analyzed by using PL spectra, Raman Spectroscopy, Rutherford backscattering Spectroscopy (RBS) and high-resolution X-ray diffraction. The values of strains and lattice constant varying with implantation doses were given. Clear interface disorder and implantation self-annealing effect were found for these samples. Both 'blue shift' and 'red shift' of the PL spectra were observed, which might originate from the modification of the energy gap for different structures. The range distributions and electronic stopping powers for Bi+ ions and F+ ions implanted optoelectronic crystals, some new results were obtained.

采用离子注入、电子束掩膜制版、快速退火技术研究（ＡｌＧａ）ＩｎＰ量子阱的组分混合行为。用ＳＩＭＳ、ＴＥＭ、ＰＬ方法分析不同注入离子种类、剂量、退火条件下量子阱材料的组分混合规律和扩散机理及材料的带隙兰移规律；研究注入离子横向歧离及退火时横向扩散对量子线宽度和横向势垒的影响。探讨采用离子注入技术制备（ＡｌＧａ）ＩｎＰ系列材料量子线的最佳工艺条件。