图形化场致发射电子源的全溶液法制备及电子发射调控研究

The field emission electron source has wide applications in the field of vacuum electronics. However, the conventional patterning process for preparing the cathode emitter is complicated and may introduce impurities which affect the emission performance of the device. The pattern size is not finely designed, resulting in uneven illumination. In view of the above problems, this project intends to use the planar-gate field emission electron source array as the main research object. Combining with the electric field excitation, electron scattering and electron motion trajectory rules, the effective emission size and optimal array density of the patterned emitter array in the cathode structure are proposed. The precise positioning and in-situ growth of patterned emitter arrays is accomplished by inkjet printing and thermal solution method. The project mainly focused on the effects of parameters such as Bank technology, seed layer solution rheological behavior, inkjet printing process and interface micro-processing on the uniformity of the electron emission. The electron transport mechanism of grain boundary surface and the influence mechanism of the effective emission area, global density and local density of the patterned emitter array on the field emission performance are studied. The quasi-equilibrium approximation model of the electron beam group in the field emission electron source is established to achieve coordinated regulation in horizontal and vertical directions.This project combines the high efficiency of graphical design and inkjet printing, and is expected to realize high-performance field emission electron source, which is of great significance for flexible manufacturing and large-scale integration.

场致发射电子源在真空电子领域具有广泛应用价值，而实现发射体材料精准图形化是关键技术，传统图形化工艺复杂且图形未经精细设计，导致发光不均匀。针对此问题，本项目利用电场激发、电子散射和电子运动轨迹规律，提出图形化发射体阵列有效发射尺寸和最佳阵列密度阴极结构的新思路，引入喷墨打印技术并结合热溶液法实现图案化发射体阵列精准定位和原位生长，探索场致发射电子源的全溶液法组装新方法。重点研究界面微处理、种子层溶液流变行为、Bank技术、喷墨打印工艺等参数对阴极材料和场发射电子均匀性的影响规律，揭示晶界电荷传输机理，实现水平和垂直方向上协同调控的场发射模式；研究图形化发射体阵列有效发射面积、全局密度和局部密度对场发射性能的影响机制，建立场致发射电子源中电子束群的准平衡近似模型，为研制高性能电子源提供科学依据。本项目结合图形化优化和高效喷墨打印，可获得高性能场致发射电子源，对柔性制造和大规模集成有重要意义。

场致发射电子源在真空电子领域具有广泛的应用价值，如何实现场发射阴极材料在器件结构的原位均匀生长和图形化，揭示其电子发射机制是该研究亟需解决的关键科学技术难题。本项目借助喷墨打印和热溶液法技术实现图案化发射体阵列精准定位和原位生长，进行平栅极场致发射电子源的全溶液法组装。主要研究内容：量子点种子层溶液流变行为、喷墨打印工艺、界面微处理和热溶液法工艺等参数对阴极材料和场发射电子均匀性的影响规律。针对传统图形化工艺复杂且图形未经精细设计，导致电场分布不均匀的问题，通过ANSYS Maxwell 16.0仿真软件研究图形化阵列电子发射轨迹规律，通过优化图形化发射体阵列有效发射尺寸和最佳阵列间距，从而减小场叠加和场屏蔽效应可以改善场发射性能。结合图形化设计和喷墨打印的高效性，有望实现高性能场致发射电子源，对柔性制造和大规模集成有重要意义。发表标注项目基金号的论文10篇（9篇SCI收录和1篇EI收录），培养在读硕士研究生4名。