SiC柔性场发射阴极材料制备与精细调控及其电子发射特性

Recently, flexible electronic devices constructed by semiconductor functional nano-units with both excellent mechanical flexibility and physical properties have been one of the active and hot research focuses, due to their wide and interesting applications in the fields such as electronic fabrics, distributed sensors, large-scale bending displays and so on. In present work, directed by the investigation of novel SiC flexible field emission cathode materials with high performace, we will firstly realize the controlled growth and doping of the SiC nanoarrays via pyrolysis of polymeric precursors by precisely tailoring the experimental parameters. The obtained low-dimensional SiC nanostructures with designed bamboo-like tips might take advantage of local field enhancement effect, increasing the electron emission cites and tailoring the energy band together, which lead to the collaborative enhancement of the electron emission ability, and thus result in the significant improvement of their field emission properties. The research work of this project will be carried out systematically to characterize the electron emission performance of SiC flexible nanoarrays, clarify and optimize the relationship among the structure, doping, temperature and the field emission properties, disclose the mechanism of the electron emission as well as their work ability under high-temperature conditions. Current work might put forward the exploration of SiC flexible field emission cathode material with excellent properties, and could provide some scientific data and basic theories for their potential applications.

利用纳米半导体组元构建兼具机械柔性和优越性能的功能柔性电子器件，在电子织物、分布式传感器、以及大型弯曲显示等领域具有广泛的应用前景，是当前活跃的研究热点之一。本项目拟以新颖高效的SiC柔性场发射阴极材料研发为导向，通过有机前驱体热解工艺的精细控制，实现SiC柔性纳米阵列结构与掺杂的设计与制备，以期集局域场增强效应、增加电子发射点和能带调控等三种方法为一体，协同强化其电子发射能力，大幅度提高其场发射性能。相关工作将系统检测和分析SiC柔性场发射阴极材料的电子发射特性，阐明和优化SiC 柔性纳米阵列结构、掺杂、温度与场发射性能之间的相互关系，揭示其电子发射机理及其高温条件下的工作能力，有望获得性能优异的SiC柔性场发射阴极材料，为其潜在应用提供一定的科学数据和理论依据。

利用纳米半导体组元构建兼具机械柔性和优越性能的功能柔性电子器件，在电子织物、分布式传感器、以及大型弯曲显示等领域具有广泛的应用前景。本项目以高性能SiC柔性场发射阴极材料研发为目标，通过有机前驱体热解工艺的精细控制，实现SiC柔性纳米阵列结构与掺杂的设计与制备，以期集局域场增强效应、增加电子发射点和能带调控等三种方法为一体，协同强化其电子发射能力，大幅度提高其场发射性能。项目工作系统检测和分析了SiC柔性场发射阴极材料的电子发射特性，阐明和优化SiC 柔性纳米阵列结构、掺杂、温度与场发射性能之间的相互关系，揭示其室温和高温下的电子发射机理。我们研发出了具有超高电流发射稳定性的P掺杂SiC柔性场发射阴极材料。在室温至673K服役条件下，其开启电场低至0.73 V/μm，电子发射波动性仅为±2.1%–3.4%，且其综合场发射性能几乎不受弯曲状态和次数的影响，同时拥有良好的机械柔性和高温电子发射稳定性，展现出良好的应用前景。通过对SiC纳米线进行掺杂的优化及其形貌的协同调控，实现了具有B掺杂的表面具有尖锐结构的SiC纳米线的制备，其开启电场为0.94-0.68 V/μm，在不同弯曲状态、弯曲次数和不同服役温度等苛刻工作条件下的电子发射稳定性为±1.0-3.4%，实现了具有优异的综合电子发射能力的SiC柔性场发射阴极材料的研发。.项目相关工作在国际期刊上共发表SCI论文21篇，影响因子均大于3，其中影响因子大于7的10篇，一区期刊封面论文4篇。申请国家发明专利9 项，授权8项，圆满完成本项目拟定的研究内容和目标 (拟定的目标：预计在国外学术期刊和国际会议上发表SCI收录论文20 篇以上，其中影响因子大于3 的12 篇以上，力争发表影响因子大于7 的2 篇以上，申请国家发明专利3 项以上)。