基于Pt/TiO2-x/TiO2/TiO2+x/Pt结构忆阻器的新型非易失性存储器电路设计与实现

Memristor is a novel nonlinear resistance. Its unique characteristics of nonvolatile, nanoscale and three-dimensional stack have made the memristor open up new possibilities in the development of the nonvolatile memories. This study mainly focuses on the circuit design and fabrication for a novel nonvolatile memory using memristors with Pt/TiO2-x/TiO2/TiO2+x/Pt structure, which was proposed by our group in the previous work. Firstly, we will investigate the micro-switching mechanism for the memristor with Pt/TiO2-x/TiO2/TiO2+x/Pt structure from the quantum level using the first principles method. And we will explore the effects of the physical parameters of the memristor on its performance such as the resistivity and switching speed and so on, in which physical parameters include the concentration and distribution of oxygen cavities and oxygen ions, the thickness of nano-films, the cross point areas of Pt nanowires, and applied voltage, etc. Based on above analysis, SPICE model of the memristor suited for integrated circuit design will be built. Moreover, the nonvolatile memory circuit including memory array and peripheral circuit will be entirely designed by the combination of different sizes Pt nanowires and memristors. Finally, the chip for a nonvolatile memory array will be prepared by magnetron sputter plating and electron beam lithography processes. This study will break the patent barrier between different countries, and provide a powerful technique support for the upcoming faster and more energy-saving analog computer with ourselves independent property right.

忆阻器是一种新型的非线性电阻元件。由于其具有非易失性、纳米尺度和三维堆叠等特性，在实现非易失性存储器方面具有巨大的应用前景。本项目拟依托于申请者所在课题组前期工作中提出的Pt/TiO2-x/TiO2/TiO2+x/Pt结构忆阻器，研究基于该结构忆阻器的新型非易失性存储器电路设计与实现的科学问题。采用基于量子机制的第一性原理方法对忆阻器的微观工作机理进行深入研究。揭示忆阻器内氧空位和氧离子的浓度及分布梯度、纳米膜厚度、铂纳米线交叉点面积、外加电压等因素对忆阻器电阻率和开关速度等宏观特性的影响规律。在此基础上，建立便于集成电路设计的忆阻器SPICE模型。采用不同尺寸的铂纳米线与忆阻器组合，设计仅包含铂纳米线和忆阻器元件的存储器电路。最终通过磁控溅射镀膜和电子束曝光等技术制备新型非易失性存储阵列的原型芯片。该项研究将为打破国际专利壁垒，使我国掌握具有自主知识产权的下一代信息存储技术提供技术储备。

忆阻器由于具有非线性电阻特性、非易失性、结构尺寸的纳米维度和三维堆叠等特性，在实现非易失性存储器方面具有巨大的应用前景。本项目研究基于Pt/TiO2-x/TiO2/TiO2+x/Pt 结构忆阻器的新型非易失性存储器电路设计与实现的科学问题。首先采用基于量子机制的第一性原理方法对忆阻器的微观工作机理进行研究，分析了忆阻器内部氧空位和氧离子的浓度及分布梯度、纳米膜厚度、外加电压等因素对忆阻器电阻率和开关速度等宏观特性的影响。在此基础上，建立了Pt/TiO2-x/TiO2/TiO2+x/Pt 结构忆阻器的器件模型。为了促进忆阻器在电路设计方面的应用，建立了便于集成电路设计的忆阻器SPICE 开关模型。为了验证忆阻器的器件模型和SPICE模型，通过电子束光刻和电子束曝光等技术制备了Pt/TiO2-x/TiO2/TiO2+x/Pt 结构忆阻器的器件。实验测试结果验证了我们提出的器件模型和SPICE模型。在深入分析忆阻器特性的基础上，设计了存储器单元电路。最后，设计并制备了10×10忆阻器阵列。该项研究将为我国掌握具有自主知识产权的下一代信息存储技术提供技术储备。