叠层型RF-SiP多物理场协同分析技术

With the requirement of miniaturization, multifunction and high reliability of RF system, electronic technology is developing rapidly in the direction of heterogeneous integration. Si based stacked SiP technology has the characteristics of light weight, high integration, low power consumption and three-dimensional stacking, has become the focus of academic research. The research on the application of RF system in domestic and abroad is still at the initial stage, especially in the case of stacked RF-SiP multi-physics analysis. Based on the theory, simulation and test, the mathematical and physical model of the interconnection structure is established, and the frequency and temperature characteristics of the structure are studied. The research of TSV inductive and capacitive coupling analysis, ground / power network input and transfer impedance control, as well as electromagnetic shielding of silicon cavity, and so on, can effectively reduce the conductive coupling and space radiation of the stacked SiP. Based on the iterative analysis method of electro-thermo-mechanical coupling, the propagation characteristics of the interconnection network in the thermal field and stress field are studied. Through the establishment of the stacked RF-SiP synthesis method, it can avoid the problem of the electrical, thermal and stress in small scale, and improve the accuracy and efficiency of the design.

随着RF系统小型化、多功能、高可靠要求越来越高，电子技术正朝着异质集成方向迅速发展。Si基叠层型SiP技术具有重量轻、集成度高、低功耗、三维堆叠的特点，已成为学术界研究的热点。但国内外对Si基叠层型RF-SiP的研究还处于起步阶段，尤其是热-电-力综合分析还比较缺乏。本申请研究叠层型RF-SiP的多物理场耦合协同分析技术。理论、仿真与测试相结合建立互联结构传输的数学/物理模型，研究其频变、温变特性以及热电耦合特性。开展TSV电感和电容性耦合分析、接地/电源网络输入和转移阻抗控制，以及硅腔电磁屏蔽等机理性研究，有效降低叠层型SiP的传导性耦合和空间辐射。利用电-热-力多物理场耦合迭代分析方法，研究互联网络在热场、应力场下传输特性变化规律。通过建立的叠层型RF-SiP综合分析技术，可提前规避小尺度下潜在电、热和应力问题，大幅提高设计准确性与效率，也为更复杂的系统集成奠定基础。

叠层型封装可实现立体封装，更适用于系统的小型化需求。但其在RF系统应用中的研究尚不完善，小尺度下噪声干扰严重，热流密度高、应力集中等问题。相比板级系统应用，叠层型三维系统更加复杂，单纯单场分析已经不能满足需求，需要采用理论/仿真分析和实验验证结合，开展电-热-力多物理场耦合仿真分析。本项目研究包括：1）叠层型集成方案及硅转接板基本特性研究。包含集成方案的选择，硅材质性能的影响，传输线、WB传输性能，TSV串扰和空间辐射分析等。2）硅转接板集成SIW滤波器研究，心频率为29.8GHz，插入损耗为3.45 dB，3dB相对带宽为5%，带外抑制大于57dB，通带内回波损耗小于-12dB，基于硅基转接板的SIW滤波器符合设计指标。3）叠层型硅转接板散热和热耦合研究，耦合热阻矩阵方法分析多热点耦合问题。4）硅基RF-SiP热-电耦合特性研究，电学设计会影响系统散热效果，TSV漏电流随电压和温度的提高而提高，200℃的损耗是25℃的5倍。5）硅基RF-SiP热-力耦合特性研究，硅材料与芯片CTE匹配度较好使得结构优化后的翘曲较小。6）硅基RF-SiP热-力-电耦合特性研究，翘曲、应力与电迁移主要影响可靠性和通断性，对高频性能影响相对小。7）基于Si基叠层集成方案成功应用于一款Ka 波段RF-SiP。