深亚微米集成电路在轨退化模型与软错误评测技术

High precision evaluation methods of soft error sensitivity is the foundation of designing and optimizing high reliability integrated circuits(ICs). However, the traditional evaluation methods of soft error sensitivity do not consider the influence of the displacement damage effect and total ionizing dose effect(TID) on single event effect(SEE), which may lead to the evaluation results cannot truly reflect the condition of semiconductor device on orbit, and have low precision. The main research contents are listed as follows. Construct the relationship between the numbers of electron-hole pairs and defect/defect clusters generated by the radiation of heavy ions and the energy, linear energy transfer(LET), non-ionizing energy loss(NIEL). Research on the characterization methods of defect/defect clusters. Build the relationship between the radiation dose,the number of defect/defect clusters,trapped charge induced by the radiation of heavy ions and electron hole pairs to construct the model of single event effect. Evaluate the validity of the proposed the model of single event effect considering the influence of the displacement damage effect and total ionizing dose effect on single event effect by applying the computer simulation and radiation test of heavy ions. Design high precision evaluation methodology of soft error sensitivity based on the proposed single event effect model.Based on the implementation of the proposed project, we will achieve the high precision evaluation system of soft error sensitivity simultaneously considering the displacement damage effect and total ionizing dose effect, which in turn will play an important role in promoting the development of radiation hardening in practice.

软错误敏感性评估是设计和优化高可靠集成电路的基础，传统软错误敏感性评估方法未考虑位移损伤和总剂量损伤对单粒子效应的影响，导致评估结果无法正确反映器件在轨行为。本项目拟研究在考虑位移损伤和总剂量损伤对单粒子效应影响前提下，建立精确的软错误敏感性评估方法。重点研究：离子辐射诱导的电离通道和缺陷/缺陷簇与离子能量、线性能量转移值（LET）、非电离能量损失(NIEL)等参数的关系；辐射诱导的晶格移位缺陷/缺陷簇的空间分布表征方法，以及缺陷大小与陷阱能级和密度之间的关系；建立辐射剂量、缺陷\缺陷簇、电子-空穴对、器件性能之间联系，并构建单粒子效应模型；应用计算机模拟和辐照实验，验证考虑位移损伤和总剂量损伤条件下的单粒子模型的正确性；以单粒子效应模型为基础，设计高精度的软错误敏感性评估系统。通过本项目研究，拟得到考虑空间辐射综合效应的软错误敏感性评估方法，对推动抗辐射加固领域进步具有实

随着电子元器件/集成电路特征尺寸的不断缩小，电子元器件/集成电路对空间辐射、核辐射环境甚至地面辐射环境越来越敏感，带电粒子会引发软错误(Soft Error)，导致电子元器件/集成电路出现信息丢失或功能失效，因此，军事和航天领域的高可靠电子元器件/集成电路，对软错误的评测与防护一直是亟待解决的关键问题。.本项目基于模拟和仿真结合的手段，对单粒子效应、总剂量效应、位移损伤效应以及耦合效应开展了系统研究。表明辐射效应和温度效应对硅基集成电路的性能具有显著的影响。构建了软错误评估模型，在存储器电路和组合逻辑电路上进行了失效模型提取和建模。经流片、辐照试验进行了对比。结果表明，所提出的模型与试验吻合度较高构建错误率评估平台，考虑多环境因素、宽能谱分布的空间环境影响。项目的成果将有力支撑载人登月、深空探测等未来多个型号任务，推进我国宇航电子元器件发展。