基于有机半导体/金属/无机半导体的叠层结构的双极型全透明无铟薄膜晶体管研究

In the background of all the world advocating green economy, energy efficiency and environmental protection, reducing energy consumption as well as controlling costs is a prerequisite for powerful competition of the next generation of transparent optoelectronic devices. Transparent thin-film transistors (TTFTs) is one of the necessary components in practical process of transparent optoelectronic devices. Although TTFTs has been made great progress during the past ten years, the unipolarity and the huge request of Indium which is a kind of rare metal used in the semiconductors and electrodes materials made the TTFTS confronted with many challenges including device performance, power consumption and fabrication cost. This project proposes a new kind of indium free ambipolar TTFTS based on the organic/inorganic semiconductor hetero structures, which means, we will utilize the hetero-junction made of indium free N type inorganic metal oxides and P type organic as the active layer, and ultrathin metal films as source-drain electrodes to settle the issues mentioned above. The program aims at obtaining Indium free ambipolar TTFTS with high performance and optimized device architecture while exploring the intrinsic workings of ambipolar transparent TFTs. The research results from this project will lay solid foundation for ambipolar TTFTS to be used in transparent displays as well as transparent logic circuits.

在世界各国都在倡导绿色经济和节能环保的时代背景下，降低能耗和控制成本是下一代透明光电子器件形成有力竞争的前提。透明薄膜晶体管(TFTs)是透明电子产品在实用化过程中的必需元器件之一。在过去十几年的发展过程中，透明TFTs虽然取得了很大的进步，但是由于其大多为单极型器件，且在半导体和电极材料中大量使用稀有金属铟，导致其在器件性能、能耗和成本上都面临着诸多问题。本项目提出基于有机半导体/金属/无机半导体的叠层结构的双极型全透明无铟TFTs，将采用无铟N型无机金属氧化物半导体和P型有机半导体构成的异质结作为有源层，以超薄金属薄膜作为源漏极，旨在解决上述问题。本项目以获得高性能的双极型透明无铟TFTs为目标，优化器件结构，探索双极型透明TFTs的内部工作机理。研究结果将为双极型透明TFTs在透明显示和透明逻辑电路等方面的应用打下良好基础。

全透明上转换发光器件在医学成像、质量监控、夜视仪和国防安全等红外成像领域的潜在应用，近年来日益受到广泛关注。本项目在执行期间，圆满完成任务书规定的研究任务和研究指标，取得了较好的科研成果，项目实现了全溶液处理的量子点上转换器件，分别探究了光生电子和光生空穴在上转换器件中的传输特性与机制，得到了6 %以上的转换效率，近红外开关比高达104以上；开发了适用于全透明上转换发光器件的工艺流程，实现了基于ITO顶部透明电极的全透明量子点发光二极管，在8 V的偏置电压下，器件的总亮度为33800 cd/m2，电流效率为16.0 cd/A, 外量子效率为11.8 %，器件在可见光范围内的平均透过率为74 %，在550 nm波长处透过率高达82 %，使其综合性能达到了目前同类器件的最高水平；本项目结题时，实现发表SCI文章8篇，全部为标注基金的文章，申请专利3项，其中授权1项，协助培养博士生4名，其中在职博士生1名，均圆满甚至超额完成任务书指标。项目成果为获得柔性可穿戴的全透明上转换发光器件奠定了基础，并有潜力拓展探测波长和提升转换效率，进一步研制中红外和远波红外探测及成像系统。