HgCdTe面阵探测器材料均匀性的调制光致发光谱方法与机理

Infrared detection is a key issue in the National strategic security, of which infrared Focal Plane Array (FPA) detector based on narrow-gap HgCdTe semiconductor plays a dominant role. The uniformity of the HgCdTe restricts the advances in the FPA performance, the characterization of the uniformity is hence a crucial and to-be well-resolved problem. Domestically, resolving the uniformity problem will be surely beneficial for promoting the performance of both materials and devices, and narrowing the gap with the advanced infrared FPA level in the world. .In this project, based on our innovative infrared modulation photoluminescence (PL) method and experimental system, a novel scanning infrared PL method will be first constructed for quantitatively characterizing the uniformity of alloy content and dopant/activation in a wide infrared spectral range of 4-20 microns and with an over 100 pixels scanning ability, so as to establish a routine procedure for narrow-gap semiconductor plane-array material engineering and experimental study. A detailed infrared modulated PL study of the HgCdTe plane-array materials will then be conducted under different conditions of temperature and excitation power for the uniformity and its evolution mechanism with content, doping and annealing temperature. New phenomena is to be identified, mechanisms clarified, and key parameters derived, which will be constructive for the research in the state key laboratory.

红外探测事关国家战略安全。基于窄禁带半导体HgCdTe的红外焦平面阵列(FPA)探测器在军事和国家安全等领域占据举足轻重地位。HgCdTe材料均匀性是FPA像元数扩大和探测器性能提升的瓶颈性难题，均匀性评价是国际上亟待解决却失于有效实验手段的关键问题。就国内而言，解决均匀性问题更有助于缩小与国际先进红外FPA探测器水平差距，推动材料与器件性能的进一步提升。.本项目创新点在于，基于我们红外调制光谱方法和实验系统优势，构建可覆盖4-20微米波段、百个单元以上扫描成像红外PL光谱测试能力和组份、掺杂/激活均匀性分析方法，为窄禁带半导体面阵材料工程应用和机理研究提供有效途径；开展HgCdTe面阵材料变条件组合研究，获取组分、电子能带结构、杂质均匀性关键参数及其随组分、掺杂水平、退火温度演化，观测新奇现象，弄清相关物理机制，在红外调制光谱物理研究中取得新结果，助推国家重点实验室学科发展。

红外焦平面阵列(FPA)探测器在军事和国家安全等领域占据举足轻重地位。材料均匀性构成FPA像元数扩大和探测器性能提升的瓶颈，材料均匀性评价因此成为重要而迫切研究课题。光致发光(PL)光谱在揭示禁带、带边杂质分布等方面有红外透射光谱无法比拟的优势，但是由于技术局限，长波红外PL光谱测试本身就是难题，扫描成像研究报道在国际上也极为罕见。.本项目针对窄禁带半导体光谱响应范围和弱光谱特征信号特点，优化红外调制PL光谱信号收集效率、降低环境干扰，结合样品空间定位与可靠控制，实现了覆盖4-20微米波段、可开展12x12单元、单元尺度30微米x30微米的二维扫描成像红外调制PL光谱实验条件，形成了以二维扫描成像PL光谱为基础、以单元变温/变激发/变磁场PL光谱分析为辅助的面阵材料均匀性分析方法；基于窄禁带半导体HgCdTe等面阵材料，开展了扫描成像红外PL光谱测试和单元变温/变激发/变磁场PL/PR光谱测试，获得了均匀性定量描述，分析了均匀性演化机制。申请了2项发明专利其中1项已获授权，发表了7篇标注资助研究论文，作4次学术会议邀请报告，培养5名研究生、其中3人完成了学位论文答辩。完成并部分超过预定研究目标。