原子层沉积法制备硅基m面ZnO紫外发光二极管及金属纳米颗粒表面等离激元耦合增强发光研究

Ultraviolet （UV）curing is widely used in large-scale digital printing, integrated circles, optical coating and fingernail beautifing. In this proposal, we use atomic layer depositon (ALD) to prepare nonpolar ZnO UV light-emitting diodes on Si substrates. The center wavelength of the m-plane ZnO based UVLEDs locates at 385 nm, which is just good for UV curing. The detailed ALD growth process is as follows: Firstly, p-NiO thin films are grown on p-Si(111), followed by the growth of m-ZnO thin films. The basic heterostructure is m-ZnO/p-NiO/p-Si. Then, Al nanoparticles arrays are designed and fabricated on either Si substrates or on m-ZnO surfaces. The localized surface plasmon resonance of the metal leads to a selective photon absorption, an enhancement of local electromagnetic field near the metal nanoparticles, and a higher radiative decay rate, and thus, the UV emission can be enhanced. This project helps to fill the blanks of the non-polar ZnO based UVLEDs. It is expected for us to develop new types of proto-devices, to apply for several patents and to publish more than 10 high-quality papers.

紫外固化在大型数字喷涂打印、印刷、集成电路与电子元器件、光学厚度涂层和美容等领域获得广泛应用。本课题拟采用原子层沉积（ALD）法制备硅基非极性面（m面）ZnO紫外发光二极管（UVLED），其中心发光波长位于385nm处，正好用于紫外光固化。具体工艺流程是用ALD在p-Si（111）衬底上先生长p-NiO薄膜，然后再生长m面ZnO薄膜作为n型层，制备基本结构为m-ZnO/p-NiO/p-Si的异质结发光器件。用Al金属纳米颗粒（阵列）表面等离激元与异质结有源区耦合，增强紫外光发射。本课题已有很好基础，最终成果可望直接应用于工业生产，填补在非极性面UVLED研制和应用方面的空白；预期可以研制多种异质结原型器件，申请多项发明专利以及发表十篇以上高水平研究论文。

本课题采用原子层沉积（ALD）法制备硅基和GaN基非极性面（m面）ZnO紫外发光二极管（UVLED），其中心发光波长位于365-385nm处，正好用于紫外光固化。具体工艺流程是用ALD在p-Si（111）衬底上先生长p-NiO薄膜，然后再生长m面ZnO薄膜作为n型层，制备基本结构为m-ZnO/p-NiO/p-Si和m-ZnO/interlayer/p-GaN的异质结发光器件。用Al金属纳米颗粒（阵列）表面等离激元与异质结有源区耦合，增强紫外光发射。本课题还研制成功基于ZnO和GaN异质结的白光芯片，它无需通过荧光粉转换，能直接从半导体芯片是发射高强度白光。本课题最终成果可望直接应用于工业生产，填补在非极性面UVLED和白光LED研制和应用方面的空白，申请8项国家发明专利（其中一项获批），发表了18篇标注有本基金的SCI号论文。