辐照过程中磷元素诱导碳化硅析出石墨相的微观机理研究

SiC is a nuclear material with wide application prospection and will be used widely in the field of nuclear energy in future. In order to ensure the safety and reliability, close attention should be attached to various irradiation behaviors. This project investigates the C element in SiC and explores the irradiation behavior of graphite segregation induced by P impurity during irradiation. Based on a series of experiments of the Ar ion irradiation into P-implanted SiC single crystals, this project clarifies the dependence of graphite segregation on the P impurity concentration and irradiation parameters (irradiation damage dose, irradiation temperature, and irradiation time). The XRD, TEM, RS, XPS, and nanoindentation measurements will be employed to identify the microstructure and thermal stability of graphite clusters and analyze the influence of the graphite segregation on the micro mechanical properties. The microscope mechanism of P impurity inducing graphite segregation will be realized finally. The research achievements can contribute to evaluating the SiC irradiation effect.

SiC是应用前景广阔的核材料，未来将在核能领域得到广泛地使用，为了保证使用的安全性和可靠性，任何辐照行为都需要引起重视。本项目以SiC中的C元素为研究对象，针对辐照过程中P诱导SiC析出石墨相的辐照行为展开研究。拟利用Ar离子辐照预注入P离子的单晶SiC样品，首先明确石墨相析出对P杂质浓度和辐照参数（包括辐照损伤量、辐照温度和辐照时间）的依赖性，再利用XRD、TEM、RS、XPS和纳米压痕仪等检测手段确定石墨颗粒的微观构型、热稳定性及其对微观力学性能的影响，最终澄清石墨相析出的微观机理，为评价SiC的辐照效应提供依据。