过渡金属硫族化合物超薄薄膜制备和物理性质研究

Transition metal dichalcogenides have recently generated great interests and attention in condensed matter physics and materials science due to their exotic physical properties and potential device applications. In this study, we will explore the molecular beam epitaxy growth of high quality transition metal dichalcogenide ultrathin films with the precise control of thickness and composition, and establish the growth conditions, and meanwhile investigate their intriguing physical properties by in-situ cryogenic scanning tunneling microscopy/spectroscopy under strong magnetic field. Moreover, we hope to develop transition metal dichalcogenide composites with more excellent features and pave the material foundation for future application. The present study not only helps understand deeply the exotic properties and their mechanism of transition metal dichalcogenides, but also provides new avenue for controlling and designing transition metal dichalcogenides as well as their composites.

过渡金属硫族化合物因其独特的物理性质及良好的应用前景最近在凝聚态物理和材料科学领域引起了广泛的研究兴趣和关注。在本项目中，我们拟利用分子束外延技术探索制备高质量、厚度和组分精确可控的过渡金属硫族化合物超薄薄膜，并建立其分子束外延生长的条件，进而利用原位的低温强磁场扫描隧道显微镜/谱研究其新奇的物理性质。在这些工作的基础上，我们也期望发展具有更优越性能的过渡金属硫族复合物材料，为实现其技术应用奠定重要的材料基础。此项研究一方面可以深入理解过渡金属硫族化合物的新奇物理性质及其起源，另一方面也为控制生长和系统设计过渡金属硫族化合物/复合物提供了新的实验途径。

探索低维量子材料的新奇电子态以及微观机理是凝聚态物理研究领域的重要研究课题。本项目实施三年来，我们主要针对金属氧硫族化物薄膜的分子束外延生长、表面结构、电荷序和超导电性进行了较为系统的研究，同时还开展了基于异质外延薄膜界面超导新体系以及超导微观机理方面的深入探究，取得了一些重要的实验进展。