过渡金属二硫族化合物大单晶和大单晶阵列的制备

Two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors, an important family of two dimensional semiconductors, have attracted considerable attention for their distinct physical and chemical properties and potential applications in sensors, 2D electronics, optoelectronics, flexible electronics as well as new types of valleytronic and spintronic devices. For practical applications, large size single crystal and sigle crystal array of such 2D semiconductors are necessary for batch fabrication of device array, similar to traditional planar electronics. This project aims to explore robust and repeatable chemical(physical)（C（P）VD） vapour depostion technique to prepare large size 2D-TMD single crystal through improving the stability, homogeneity and controllability of the tempreture and atmosphere field of the CVD(PVD) process；prepare large size2D-TMD semiconductor single crystal array using location nucleating technique and the single crysal growth technique; prepare super large size(several centimeters to several inchs)2D-TMD semiconductor single crystal through controlling the growth orientation of single crystal array and promoting the single crystal array to merge without grain boundary， characterize the uniformity and consistency of the prepared sample using electronic and optoelectronic technique. The synthesis technique of 2D-TMD large size single crystal array and super large size single crystal would pave the way of the practical application of 2D-TMD in the field of sensors,electronics and optoelectronics.

过渡金属二硫族化合物二维材料（2D-TMDs）等二维半导体材料由于优异的物理化学性能和电子、光电子、传感器等领域的潜在应用显得日益重要。二维半导体大单晶在器件的批量制备等二维材料实际应用中非常重要；而大单晶阵列是2D-TMD实际应用的另外一个可行选择。本项目提高CVD(PVD)生长工艺中的温度场、气氛场的稳定性、均匀性和可控性，发展可靠的、高重复性的CVD技术制备2D-TMD大单晶；在大单晶生长技术的基础上，通过定点成核等方法制备2D-TMD等二维半导体阵列；通过控制大单晶阵列的晶体生长取向，使得大单晶阵列的个各个单晶无晶界融合，形成特大（数厘米乃至数吋）单晶; 应用电子学、光电子学等方法表征大单晶和大单晶阵列的均匀性和一致性。2D-TMDs大单晶阵列和特大单晶的制备将为2D-TMD为代表的二维半导体在电子学、光电子学、传感器等中的应用奠定坚实的基础。

二维材料具有原子薄的厚度，免疫短沟道效应等特性，在后摩尔时代有巨大的应用潜力。开发二维异质结阵列的制备方法，构筑二维高性能晶体管是实现下一代高速，低功耗数字电子产品的关键之一。本项目的研究工作主要是开发了激光烧蚀技术，实现了二维垂直和横向异质结阵列的普适性制备；开发了制备二维高阶超晶格的普适性方法；获得了1.72 mA/μm的单双层二维半导体晶体管开态电流密度的世界纪录；在WSe2上外延制备了CrSe2磁性材料，在空气中放置200余天磁性能几乎不变化。以本项目申请单位为第一单位，项目负责人以通讯作者在Nature、Nature Nanotechnology、Nature Materials、Nature Electronics等期刊发表论文21篇。这些工作受到了学术界的正面引用和高度评价。通过本项目的实施，为高性能新型器件的量产化提供了新的思路，为二维材料在电子学、光电子学、电磁学等领域的实际应用奠定了坚实的基础。