碳化硅探测器辐照损伤特性研究

X ray derecting technology has been applied in the space science, industry, agriculture and other aspects. The temperature and radiation tolerance of detectors，used in out space and high energy experiment，is the focus of everyon's attention.SiC detectors is presently developed for use in these conditions．Due to its wide bandgap，high displacement energy and electron mobility,SiC is currently the most promising alternative material to silicon for temperature and radiation hard detector devices in future．The SiC derector will be finished by the Schottky barrier in this proposal. The irradiation experiment will be carried out with theγ and proton beam.The dark current and energy resolution will be measured before and after the irradiation experiment. The irradiation dose of SiC will be obtained by comparing with the Si pin detector. The effect of fast annealing on the irradiation will be studied.

X射线探测技术在空间科学、工农业生产及安全检测中都有广泛的应用，而在外太空及高能物理实验等高温高压以及强辐射环境中进行辐射探测时，探测器的耐高温和耐辐照性能备受关注。随着材料技术的发展，关于二元半导体碳化硅(SiC)作为辐射探测器的研究已经取得良好进展。SiC晶体因其禁带宽度大、晶体原子离位能大以及电子空穴迁移率高等特点，最有希望在将来代替Si作为耐高温耐辐照半导体探测器的材料。本课题采用肖特基结制备碳化硅探测器，利用γ源和质子辐照测定总剂量效应，结合课题组已有电的子学成果，检测辐照前后探测器暗电流和能量分辨率变化程度，通过与Si pin探测器比较标定SiC探测器抗辐照特性，最后研究快速热退火对辐照损伤的修复。

X 射线探测技术在空间科学、工农业生产及安全检测中都有广泛的应用，而在外太空及高能物理实验等高温高压以及强辐射环境中进行辐射探测时，探测器的耐高温和耐辐照性能备受关注。随着材料技术的发展，关于二元半导体碳化硅(SiC)作为辐射探测器的研究已经取得良好进展。SiC 晶体因其禁带宽度大、晶体原子离位能大以及电子空穴迁移率高等特点，最有希望在将来代替Si 作为耐高温耐辐照半导体探测器的材料。本课题采用肖特基结制备碳化硅探测器，利用γ源和质子辐照测定总剂量效应，结合课题组已有电的子学成果，检测辐照前后探测器暗电流和能量分辨率变化程度，通过与Si pin 探测器比较标定SiC探测器抗辐照特性，最后研究快速热退火对辐照损伤的修复。