GaN基纳米线阵列高电子迁移率晶体管研制与性能研究

GaN-based heterostructure core-shell nanowires present unique advantage and wide prospective of applications in the fabrication of high electron mobility transistor (HEMT). However, due to the existing difficulties in the synthesis and preparation of GaN-based nanostructure, the realization of wafer-scale GaN nanowire-based HEMT chip has long been an obstacle for further applications. On the basis of previous research foundation, the present project will study the preparation and performances of HEMT chip based on lateral GaN nanowires array. By combining the controlling of patterned silicon substrate and the studies of the generation and suppression of dislocations at heterojunction interface, high quality GaN-based heterostructure nanowires with controlled density, diameter, composition and structure design can be obtained by Metal Organic Chemical Vapor Deposition (MOCVD) technology. The source and drain electrodes of the fabricated HEMT devices will be rationally designed, the gate dielectric layer and gate electrode with excellent gate regulation ability will be optimized and obtained, thus high performance HEMT chip based on GaN nanowire array can be fabricated. Furthermore, the properties of low-dimensional heterojunction electron gas, the electrostatic control mechanism of electron gas and the influence factor of electron transport efficiency in GaN core-shell nanowires will be intensively studied and proposed. The sum total study of this subject not only provides the fundamental study of physical properties of low dimensional nitride materials, but also contributes important research significance to the realization of nano-integrated optoelectric circuit.

GaN基异质核壳纳米线在高电子迁移率晶体管（HEMT）制备方面有独特优势和广阔应用前景。然而，由于尺寸、密度、结构可控的GaN基纳米材料生长和制备极为困难，基于GaN基异质核壳纳米线的HEMT器件研制进展缓慢。本项目基于前期基础，开展GaN基纳米线HEMT芯片的制备与性能研究。采用金属有机化学气相沉积生长方法，结合图形硅衬底的调控作用，通过深入研究外延生长中异质界面的缺陷产生和控制机制，开发出适合HEMT器件制备的异质核壳纳米线阵列。设计电极结构和制备源、漏金属电极，研制GaN基纳米线HEMT芯片。这些研究不仅探索了氮化物低维度下的物理特性，也为实现纳米功能器件集成做出贡献。

GaN基异质核壳纳米线在高电子迁移率晶体管（HEMT）制备方面有独特优势和广阔应用前景。然而，由于尺寸、密度、结构可控的GaN基纳米材料生长和制备极为困难，基于GaN基异质核壳纳米线的HEMT器件研制进展缓慢。本项目开展GaN基纳米线HEMT芯片的制备与性能研究。采用湿法化学刻蚀技术，利用GaN材料在硅不同晶面的异向外延特性，实现了空间密度、尺寸、掺杂、结构等高度可控的GaN基纳米线制备，深入研究了外延生长中异质界面的缺陷产生和控制机制，从物理特性和化学特性同时实现GaN基纳米线的调控。进一步生长出界面陡峭的GaN/AlN/AlGaN和GaN/AlN/AlGaN/GaN的纳米线HEMT结构，测试表明该HEMT具有良好的晶体质量和陡峭的截面。研究了异质结构二维电子气特性、材料极性对电荷输运的影响及异质核壳纳米线电荷传输效率的影响因素。通过设计和优化电极结构，制备源、漏金属和栅极电极，研制出了单根GaN基微米线线HEMT器件。