高功率微波对AlGaN/AlN/GaN高电子迁移率晶体管的作用机理研究

As the GaN-based devices are more and more widely used in the fields of national economy and national defense construction, the ability to work stability under the increasingly severe electromagnetic environment is becoming more and more important. However, there are few researches about the interaction mechanism of high power microwave in the GaN-based devices. Thus it is necessary to carry out relevant work to cope with the new challenges. This project aims to study the interaction mechanism of the high power microwave in the AlGaN/AlN/GaN HEMTs, to get the action regularity of the high power microwave and the weaknesses of the devices, by comprehensive analyzing the changes of distributions of the temperature, electric field, and the strain in the devices under the high power microwave, through combination of numerical simulation and experimental method. The studies of this project will be helpful to the analysis of the strong electromagnetic radiation effect and reinforcement of the new electronic information systems and power electronic systems using the GaN-based devices.

随着GaN电子器件在国民经济和国防建设领域越来越广泛的应用，日益恶劣的电磁环境对其稳定工作的能力提出了越来越高的要求。然而，目前关于高功率微波对GaN电子器件作用机理的研究报道还很少，亟待开展相关工作以应对新的挑战。本项目拟采用数值仿真与实验相结合的研究方法，综合分析高功率微波作用过程中AlGaN/AlN/GaN HEMTs器件温度、电场以及应力等物理参数演化与分布的详细情况，获取高功率微波作用规律以及器件薄弱环节，探索AlGaN/AlN/GaN HEMTs器件的高功率微波作用机理。研究成果可为使用GaN电子器件的新型电子信息系统和电力电子系统的强电磁辐射分析与加固提供理论和技术支撑。

随着GaN电子器件在国民经济和国防建设领域越来越广泛的应用，日益恶劣的电磁环境对其稳定工作的能力提出了越来越高的要求。然而，目前关于高功率微波对GaN电子器件作用机理的研究报道还很少，亟待开展相关工作以应对新的挑战。本项目采用数值仿真与实验相结合的研究方法，明确了高功率微波损伤AlGaN/AlN/GaN HEMTs为场效应诱发器件栅极靠近漏端击穿、外加偏压产生大电流烧毁器件所致；器件薄弱环节为栅极靠近漏端区域，发现了其毁伤规律为单个HPM脉冲即可使其毁伤，无需累积脉冲、毁伤效应唯一确定，即完全失效无输出，确定了AlGaN/AlN/GaN HEMTs高功率微波损伤为场效应击穿主导过程。本项目发表SCI论文2篇，参加国内外本领域重要学术会议2次，并撰写会议论文6篇。本项目的研究可为使用GaN电子器件的新型电子信息系统和电力电子系统的强电磁辐射分析与加固提供理论和技术支持。