基于低温光化学溶液沉积法制备的柔性阻变存储器研究

Flexible resistive switching memory, as an important component for data storage in flexible electronic devices, has broad application prospects in the fields of non-volatile memory and flexible and wearable electronic systems. The key point of the fabrication of flexible resistive switching memory is low-temperature thin film deposition technique. Low-temperature photochemical solution deposition method is a novel deposition technique for the fabrication of amorphous metal oxide thin film with the features of the low-temperature and the regulation of defect states. Based on our previous research work, this project proposes to investigate amorphous InGaZnO thin film and ZrO2 thin film based flexible resistive switching memories, which are fabricated by the low-temperature photochemical solution deposition method. The project intends to explore the thin film deposition parameters and study the thin film growth mechanism. Moreover, this project also plans to investigate the resistive switching performance and elucidate the switching mechanism according to the electrical characterization and the analysis results of the microstructure, defect states, and carrier transport mechanism in different resistance states. Furthermore, the results of this project will help to expand the fabrication techniques of flexible resistive switching memory, and to understand the internal relationships between the defects of thin films and resistive switching performance and mechanism, and will provide new experimental and theoretical reference guides to optimize resistive switching performance and clarify resistive switching mechanism.

柔性阻变存储器作为柔性电子设备存储数据的重要元器件，在非易失性存储器和柔性可穿戴电子系统等领域具有广泛的应用前景。柔性阻变存储器制备的关键在于低温薄膜沉积技术。低温光化学溶液沉积法是一种新型的非晶态金属氧化物薄膜沉积技术，具有低温沉积的优势和调控薄膜缺陷的特点。在我们前期研究工作的基础上，本项目提出采用低温光化学溶液沉积法制备基于非晶态InGaZnO薄膜与ZrO2薄膜的柔性阻变存储器，研究低温光化学溶液沉积法制备薄膜的工艺参数和薄膜的生长机理，根据电学表征结果和不同电阻态微观结构、缺陷状态和载流子输运机制的变化规律，研究器件的阻变性能并阐明阻变机理。本项目的研究结果将有助于拓展柔性阻变存储器的制备技术，有助于进一步认识薄膜缺陷与阻变性能和机理之间的内在联系，为优化阻变性能和厘清阻变机理提供新的实验参考与理论依据。

阻变存储器具有结构简单、高密度、高速擦写等优点，被认为是下一代非易失性存储器的有力竞争者。本项目基于非易失性阻变存储器的低温制备工艺，围绕阻变材料、阻变性能和阻变机理等方面，开展了系统的研究工作。主要研究成果包括以下三个方面：1）系统研究了低温光化学溶液法制备非晶态氧化物薄膜的阻变存储器。通过改变光照强度、光照时间等工艺参数调控了薄膜内部的缺陷。研究了氧空位的迁移和分布等与电致阻变特性的关联，分析了导电通路形成和断裂过程。2）系统研究了低温化学溶液法制备无机卤化物钙钛矿薄膜的阻变存储器。探索研究了无机卤化物钙钛矿CsPbBr3薄膜的柔性阻变存储器与物理瞬态阻变存储器。并在此基础上，研究了Bi替代重金属Pb的非铅卤化物钙钛矿CsBi3I10薄膜阻变存储器。3）系统研究了金属氧化物薄膜的阻变性能与机理。通过电学性能调控和不同电阻态的化学价态分析，细致研究了器件的多态阻变存储特性、自限制特性、互补型阻变特性以及电阻转变机理。本项目的研究为发展新型电致阻变薄膜与制备工艺，以及拓展阻变存储器的应用奠定了良好的基础。