ZnSe:Mn/ZnSe/PMMA纳米复合薄膜在脉冲强磁场下的物性研究

The magnetic element doped semiconductor material show wide .range of applications varied from electronic devices，optoelectronic devices to magneto-optical devices due to its combination of conventional semiconductor electronics and the advantages of magnetic electronics. Monodispersed, uniformly doped and high luminescent ZnSe: Mn/ZnSe core-shell structure nanocrystals will be used to form nanocomposite films,within which, ZnSe:Mn/ZnSe core-shell nanoparticles are confined in three-dimension.Then investigate the magnetic, optical, magneto-optical properties and mechanism under strong magnetic field(0-60T). This performance of project is not only provide a useful method to prepare high quanlity doped ZnSe: Mn/ZnSe nanoparticles and nanoparticles/polymer composite films, but also useful for the investigation of the magneto-optical properties of low-dimensional doped semiconductor nanoparticles and the magnetic impurities and carrier the mechanism of interaction is very important, while the project is also very important to guiding the application of doped semiconductor nanoparticles in the field of magneto-optical devices.

磁性元素掺杂的半导体材料由于其集常规半导体电子学和磁电子学的优点于一体而在电子器件，光电子器件和磁光器件等领域展现出广泛的应用前景。我们将单分散、均匀掺杂、荧光效率高的掺杂ZnSe：Mn/ZnSe核壳结构纳米晶的合成与纳米复合薄膜的制备相结合，制备出新型三维量子受限体-ZnSe：Mn/ZnSe核壳结构纳米晶/聚合物复合薄膜，并研究其在强磁场下的磁学、光学、磁光学性能和机理。本项目不仅对高质量的掺杂ZnSe：Mn/ZnSe纳米颗粒及其纳米/聚合物复合薄膜的制备，而且对于低维掺杂半导体纳米颗粒的磁光学性能以及对磁性杂质与载流子之间的相互作用机理的研究都非常重要，同时该项目的研究对掺杂半导体纳米颗粒在磁光器件领域的应用有非常重要的指导意义。

我们利用高温有机相合成法合成了过渡金属(Tm: Mn2+和Cu2+)掺杂的ZnSe:Tm/ZnS核壳结构纳米晶和稀土离子掺杂的YPO4:Eu3+和YPO4:Tb3+纳米晶，分析了掺杂种类、掺杂位、掺杂比例和壳层包覆对晶格常数、磁性能和荧光性能的影响。采用合适的表面活性剂对纳米晶表面进行了改性，使纳米颗粒良好的分散在透明绝缘聚合物聚甲基丙烯酸甲酯(Poly methylmethacrylate, PMMA)的单体甲基丙烯酸甲酯（Methylmethacrylate，MMA）中，然后通过甩膜聚合成型制备成纳米颗粒/聚合物复合薄膜。借助武汉国家脉冲强磁场科学中心，研究了0-60T磁场下纳米晶及其复合薄膜的吸收和发射光谱随磁场强度的变化，磁学性质随外磁场强度的变化；通过测量分析出晶体中的塞曼分裂能量及g因子，然后研究了离子掺杂对纳米晶的磁性和波函数的调控作用。这些研究对掺杂半导体纳米颗粒在磁光器件中的应用有一定的指导意义。