研究可利用多铁异质结构调节的微波器件

We propose the employment of multiferroic materials and magnetoelectric coupling concept in integrated microwave components, to meet the requirement of high integration, low-cost, power efficiency, large tunability and fast response time in next generation wireless communication system circuits. The research will start on the basis of the multiferroic heterostructure theory, the numerical calculation and the characterization experiences that have been built. Through both material and device path, we aim to develop the application of multiferroic heterostructure element in integrated microwave components. Utilizing electromagnetic and mechanical simulation techniques to analyze the electromagnetic characterization of the heterostructures and their influence to the microwave devices’ outputs. The ferrite thin/thick film with relatively narrow ferromagnetic resonant linewidth and low loss which prepared by the low cost spin spray technique will be included in the research. The research will focus on the implementation of multiferroic integrated device, in order to follow the trend of the application of MMIC in circuit industry. By optimizing the materials performance and the microwave device’s structure to improve the efficiency of the magnetoelectric coupling in the heterostructures, the tunability of the microwave components as well as the quality factor and the insertion loss of microwave devices. The employment of multiferroic concept to improve the performance of the next generation communication system is of significance to our defense strategy.

提出将多铁材料和磁电耦合概念从理论基础研究转化到在集成微波器件实际应用中，满足下一代军事无线通信系统对电路集成化、低成本、低功耗、可大范围调节、快响应等需求。研究从已构建的多铁异质结构理论基础、数值计算和测量表征为出发点，结合申请人的前期工作，重点从材料分析和器件需求角度寻求以多铁异质结构作为核心控制单元应用在集成微波器件中的解决方案。利用软件仿真等预测方法，研究异质结构的磁电特性以及对微波器件性能指标的影响。研究利用低成本旋转喷涂方法制备较小铁磁共振线宽和较低损耗的铁氧体薄（厚）膜和多铁异质结构。从异质结构和器件结构角度同时研究，增大磁电耦合效应和微波器件的频率调节能力，提高器件波形的品质因数和插入损耗等指标。研究基于多铁结构的集成微波器件原型，以顺应单片可集成(MMIC)电路的发展趋势。利用多铁概念提升下一代军事通信系统的性能，对国防建设具有重要的意义。

本项目主要研究基于反向电磁耦合异质结构的微波带阻滤波器。项目采取分阶段研究，分为对异质结构的材料选取搭配以及产生等效反向磁电效应的强弱控制、多铁异质结构在微波器件铸造中的加工工艺、以及最终对微波带阻滤波器的中心频率实现电压调控。在第一阶段研究发现，用PZNPT/FeGaB作为搭配的多铁异质结构可以产生高于3500Oe的巨大等效面内磁场。在第二阶段研究中，成功实现了基于FeGaB/Al2O3多层薄膜结构的制备以及刻蚀加工，并且利用其形状各项异性实现了自偏置的亚铁磁共振吸收特性，并且实现了磁场调节吸收峰中心频率。然而在将单独微波器件移植到压电材料的过程中，由于微波器件衬底硅材料无法移出，产生了巨大的钳制效应，无法通过异质结构的方法得到电压控制的可调特性。研究人员提出解决方案，但由于资源有限无法对其进行实施。本项目的主要成果：1）研究找到满足微波器件需求的多铁异质结构搭配，基于此发表sci论文一篇；2）实现基于FeGaB/Al2O3多层薄膜的自偏置带阻滤波器的加工工艺。发表sci论文一篇。