阻变存储器三维集成中的器件模型

Three-dimensional (3D) integrated technology in resistive switching memory (RRAM) is one of the most effective methods to satisfy the requirement of ultra-high density and ultra-large data storage. With the increase of the integration density, the thermal effect and thermal crosstalk of the device will seriously impact the stability, reliability and life of the memory. For the crucial issue of 3D integration RRAM, this project will focus on the study of thermal effect and carrier transport in 3D integration RRAM. We will develop a thermal effect model of 3D integration RRAM. We will also study the carrier transport characteristics in 3D integration RRAM. Finally, the device model of 3D integration RRAM including the effects of heat and electricity will be built based on the thermal effect and carrier transport characteristics. Successful implementation of the project will provide a reliable technical support for the later circuit design and practical application, and lay the foundation for the realization of the high-density 3D integration RRAM.

阻变存储器（RRAM）三维集成技术是实现超高密度、超大容量存储器最有效的路径之一。随着集成密度的不断增加，三维集成阻变器件的热效应及由此导致的热串扰现象将会严重影响存储器的稳定性、可靠性及寿命。本项目针对三维集成RRAM器件的热效应和热串扰等关键问题，选取合适的RRAM三维结构作为研究对象，分析三维集成RRAM器件焦耳热产生的原因、分布等特征，建立阻变存储器三维集成中的热效应模型；研究三维集成RRAM器件的载流子传输特性；基于三维结构下RRAM器件的热效应及载流子传输特性，建立三维结构下包含热和电效应的阻变存储器的器件模型，为后期的三维集成阻变器件的电路设计和实用化建立可靠的设计技术保障，为实现高密度三维集成RRAM奠定基础。

阻变存储器（RRAM）三维集成技术是实现超高密度、超大容量存储器最有效的路径之一。随着集成密度的不断增加，三维集成阻变器件的热效应及由此导致的热串扰现象将会严重影响存储器的稳定性、可靠性及寿命。本项目针对三维集成RRAM器件的热效应和热串扰等关键问题，系统研究了阻变器件三维交叉阵列集成中的焦耳热效应，证明了三维crossbar阻变存储器阵列reset操作过程中，瞬态热效应的主导作用；建立了三维集成RRAM的评估模型，详尽分析了三维集成阵列中热串扰效应对被串扰RRAM器件retention特性的影响；提出了降低reset电流以及cycle-rehabilitate的解决方案以应对scaling down情况下严重的热串扰效应。另外，基于第一性原理计算，系统研究了阻变层氧化物的微观结构和掺杂效应、阳离子基阻变存储器件中负向SET现象的机理，以及RRAM器件的界面特性。