三维集成高密度阻变存储器基础研究

Resistive switching memory (RRAM) has been an important candidate for the next-generation nonvolatile memeory, due to its simpel structure, high speed, low power and ease to 3D integration. Aiming at high-density storage application of RRAM through 3D integration, this project will focus on the fabrication, characterization, resistive switching (RS) and failure mechanism of 1T1R and 1D1R structures. We will research the design and fabrication of metal-oxide-based high-performance Schottky diode, the design and fabrication of self-rectifying RRAM cell based on the dopped binary metal oxide, the integration processes of 1T1R, 1D1R structures and crossbar array, the statistical electrical measurement and characterization of 1T1R, 1D1R and 1R structures. We will investigate some physical problems in RRAM such as the physical origin of self-rectifying effect, deepen the physical understanding on the RS and failure mechanism of the RRAM devices with different kinds of electrode materials, construct the physics-based models for the statistics of RS and failure parameters, and establish the framework and methodology for the research on the reliability of RRAM. These research works will provide important guidelines for the improvement of RRAM performances, lay the foundation for the high-density 3D integration of RRAM, and promote the development of the memory technology in our country.

阻变存储器（RRAM）由于其结构简单、速度快、功耗低、可三维集成等优点而成为目前新型非挥发存储器的研究重点。本项目面向RRAM的三维集成高密度存储应用，重点研究1T1R和1D1R集成结构的制备、测试表征、转变与失效机理。研究基于金属氧化物材料的高性能肖特基二极管的设计和制备、基于掺杂的二元金属氧化物阻变材料的自整流RRAM器件的设计和制备、1T1R和1D1R集成结构及交叉阵列的的集成工艺、1T1R和1D1R及1R结构的统计测试和表征。研究清楚相关的物理问题如RRAM产生自整流效应的物理根源等，明确不同电极材料的RRAM器件的阻变和失效机理，构建1T1R和1D1R结构中RRAM器件转变参数和可靠性参数的统计模型，建立RRAM的可靠性研究方法。本项目的研究将为RRAM性能的进一步改善与提高提供理论指导，为实现RRAM的高密度三维集成奠定基础，推动我国存储器技术的发展。

本项目面向RRAM的三维集成高密度存储应用，重点研究了基于金属氧化物材料的高性能肖特基二极管的设计和制备、基于掺杂的二元金属氧化物阻变材料的自整流RRAM器件的设计和制备、1T1R和1D1R集成结构及交叉阵列的的集成工艺、1T1R和1D1R及1R结构的统计测试和表征。研究了相关物理问题如RRAM产生自整流效应的物理根源等，明确了不同电极材料的RRAM器件的阻变和失效机理，构建了1T1R和1D1R结构中RRAM器件转变参数和可靠性参数的统计模型，建立了RRAM的可靠性研究方法。本项目的研究为实现RRAM的高密度三维集成奠定了基础。研究结果参与出版专著1部（《新型阻变存储技术》）；在IEEE Electron Device Letters, Applied Physics Letters, Small, Nanoscale, Scientific Reports等著名期刊发表SCI论文30篇；在IEEE Symposium on VLSI Technology, IEEE International Electron Devices Meeting (IEDM)顶级国际会议及其它国际会议上发表论文18篇。两篇IEEE Electron Device Letters论文入选ESI高被引论文榜。获授权发明专利5项，受理发明专利6项，部分专利参与签订了和中芯国际的专利共有协议、和武汉新芯的专利实施许可协议。培养了基金委优青1名、中科院青年创新促进会会员1名、国家奖学金获得者2名。