CMOS集成电路近阈值设计理论和关键技术研究

In order to meet the strong demands of high speed and low power digital application system, and the sharp increasing trend of the power consumption in the nanometer-level CMOS integrated circuits, this project researches the establishment of the theory analysis models for the MOS device and circuits in near-threshold region, and carries out the researches of the near-threshold design theory and method for the CMOS voltage-mode circuits and current-mode circuits. The project also explores the new structures of the logic circuits for near-threshold region. The near-threshold design theories and methods will be applied to the typical function blocks...The MOS transistor of the near-threshold circuits works in the moderate inversion state, which is different from the traditional voltage-mode and current-mode CMOS circuits in strong inversion state, and also is different from the sub-threshold circuits in the weak inversion state. At present, the pioneering and systematic researches are still in the blank, which include the establishment of the theory analysis models for the MOS device and circuits in near-threshold region, the near-threshold design theory and method for the CMOS voltage-mode circuits and current-mode circuits, and the new structures of the logic circuits for near-threshold region. Therefore, this project will add the design theories and methods for integrated circuits, and has important academic significances and application values.

针对数字应用系统对高速、低功耗设计的强烈需求以及目前纳米级CMOS集成电路功耗急剧增大的趋势，本项目通过建立MOS器件和近阈值电路的理论分析模型，开展CMOS电压模电路和高速电流模的近阈值设计理论与方法的研究，探索逻辑电路的近阈值新结构，并应用于典型功能电路的低功耗设计。..近阈值电路的晶体管工作在中等反型状态，有别于传统CMOS电压模电路和电流模电路的强反型状态，也不同于亚阈值电路的弱反型状态。当前，MOS器件和逻辑电路的近阈值电路理论分析模型建立方法、CMOS电压模电路和电流模电路的近阈值设计理论与方法、近阈值新型电路结构等开拓性和系统性的研究尚处于空白。因此，本项目的开展将完善集成电路设计理论和方法，具有重要的学术意义和应用价值。

随着集成电路工艺尺寸的缩小、芯片规模增大和工作频率提高，以及漏功耗的指数增长，使得芯片功耗急速增大。功耗的增大将引起器件的可靠性降低并导致芯片稳定性下降，也给芯片的散热和封装带来困难。此外，随着生物芯片、传感网、掌上型电脑、智能手机等技术的高速发展，迫切需要这类依靠电池工作的芯片在保证合理工作速度的同时，减小芯片延长电池续航时间。功耗已经成为集成电路继续发展所面临的最严峻的挑战之一。.. 项目针对集成电路发展的低功耗需求，通过建立MOS器件和近阈值电路的理论分析模型，开展CMOS高速电流模和电压模电路的近阈值设计理论与方法的研究，探索逻辑电路的近阈值新结构，并应用于典型的功能电路中。.. 项目探索了MOS器件的近阈值特性，建立了MOS器件近阈值理论分析模型。通过对近阈值建模方法的研究，获得了若干典型逻辑电路的近阈值电路模型。探索了电压模和电流模逻辑电路的近阈值设计方法，建立了近阈值的基本设计理论。提出了近阈值电流模逻辑电路的静态功耗抑制休眠技术，以及基本单轨电流模逻辑、基于传输管逻辑的单轨电流模逻辑、多下拉赋值电流模逻辑等电路新结构。项目构建了多种近阈值电压模电路新结构，包括混合传输管逻辑、CAL-CPL绝热逻辑、单轨绝热电路逻辑、钟控单轨绝热逻辑。通过一定规模的组合逻辑电路、时序电路和存储器设计，进行了近阈值设计技术在组合、时序、存储器等模块应用的验证工作。项目成果对完善集成电路设计理论和方法，具有一定的科学意义。