GaAs HBT器件及相关集成电路质子辐照效应研究

There are lots of reasons in causing electronic devices in space applications failure, where the ratio of irradiation-induced failures is 70%. Due to high irradiation reliability, GaAs heterojunction bipolar transistor (HBT) has shown great potential for space applications, such as national defense and aerospace. Currently, most of the research for irradiation effects of GaAs HBT device and circuits have mainly focused on describing the degradation of electrical characteristics. However, the irradiation mechanism still have not be studied systematically. Proton is one of the domain particles in space and proton irradiation, and it has an serious effect on the GaAs HBT device, so the project takes proton irradiation effects of GaAs HBT device and related integrated circuits as the research objects. Firstly, carrying out proton irradiation experiment of device based on SRIM software, and then exploring degradation mechanism with the help of Sentaurus software and the nonionizing energy loss (NIEL) theory. Secondly, by means of SDD technique, introducing sensitive parameters to irradiation, and then establishing device model for implementation of proton irradiation effects. Finally, exploring the mechanism of irradiation damage and degradation for related integrated circuits with the help of the device irradiation model, and putting forward effective radiation-hardened measures. We can expect that the research for the project can expend not only the depth of the theoretical study, but also the scope of practical application of irradiation effects for GaAs HBT device and related integrated circuits.

空间环境中的电子设备出现故障的原因70%归因于空间辐照。GaAs HBT器件具有较好的抗辐照特性，在国防航天等领域应用潜力巨大。目前针对GaAs HBT器件及电路的辐照研究大都集中在电学特性退化的描述上，而对于辐照机理方面，还未得到系统深入的研究。鉴于质子是空间辐照环境中主要的辐射粒子，并且质子辐照会对器件及电路特性造成严重影响，因此本项目将以GaAs HBT器件及相关集成电路的质子辐照效应作为研究对象。首先，采用SRIM软件指导器件的质子辐照实验，并结合Sentaurus软件和NIEL理论，研究质子辐照损伤物理机制；其次，引入反映辐照效应的敏感因数，采用SDD技术建立考虑质子辐照效应的器件模型；最后，利用所建立的器件辐照模型，探索相关集成电路的辐照损伤及退化机制，并提出有效的抗辐照加固措施。可以预期，本项目的研究必将拓展GaAs HBT器件及相关集成电路辐照效应的研究深度及实际应用范围。

GaAs HBT工艺具有工艺成熟，流片价格适中等优势，有利于实现超高速集成电路的实用化和大规模生产。GaAs HBT广泛应用于国防航天、空间探测、卫星遥感等军民两用领域中，鉴于不可避免的空间辐照影响，资助项目进行了GaAs HBT器件以及相关集成电路的辐照效应研究。主要研究内容包括：(1) 开展了HBT器件的质子辐照效应实验研究。采用不同能量和剂量的质子辐照，对器件的直流、交流特性进行详细地测试和分析。结合Sentaurus器件仿真软件和计算模型，讨论了HBT器件的质子辐照退化机制。仿真结果和实验结果吻合的很好，器件参数随质子剂量的退化趋势与实验结果相一致；(2) 研究建立了HBT的Keysight模型，对器件的辐照机理进行了研究。研究表明，低偏置状态下的正向基极电流的增加是由基极-发射极空间电荷区及其周边的辐照引起的缺陷引起的，而截止频率的降低是由于辐照后结电容和本征基极渡越时间的增加而引起的；(3) 研究建立了HBT器件的小信号等效模型。采用简单的RC电路来模拟交流电流集聚效应，并引入基极扩展电容，实现了完整的小信号模型，通过基于剥离算法的系统且严格的提取方法来获取所有器件参数，通过对HBT的小信号模型仿真结果和测试结果相比较，验证了所提出的器件模型以及参数提取算法的有效性；(4) 设计流片实现了多款GaAs HBT超高速芯片。设计实现的宽带功率放大器在6.6 GHz时具有大于12 dB的小信号增益，在6.0-7.1 GHz时具有29.5-31.4 dBm(0.89-1.38 W)的饱和输出功率，在6.5 GHz时最大功率附加效率为41.6％。流片实现的低相位噪声压控振荡器，采用推-推式交叉耦合VCO结构实现了高振荡频率和低相位噪声。测得的振荡带宽为30.2至28.6 GHz，调谐范围为1.6 GHz，而载波在29.3 GHz的相位噪声为-111.5dBc/Hz@1MHz。VCO在3V电源下消耗的功率为28.2mW。