γ-Al2O3/Si复合衬底上氮化镓外延材料的生长

Studying the growth parameters, specially the growth parameters of AlN wetting layer and GaN buffer layer, we have obtained on silicon substrates the device-graded GaN epilayers, GaN/InGaN superlattices and GaN/AlGaN superlattices, and n-type GaN:Si or p-type GaN:Mg films. All of them have laid a foundation for GaN devices on silicon, which can avoid the difficulties of GaN devices on sapphire substrate, simplify the device-making procedure, diminish the cost, develop the cheap domestic GaN light-emitting- diodes.

通过优化生长条件，在γ-Al2O3/Si复合衬底上生长出器件级的氮化镓外延薄膜；通过掺硅筒裘荆こ銮縩型和p型氮化镓材料，为以后开展氮化镓器件研究打下基础。由此克服蓝κ牡姿吹睦眩蚧骷蠊ひ眨档推骷杀荆贫夜谡庖徊牧咸逑档难芯拷梗⒄刮夜鄣睦豆夥⒐舛堋