超低功耗柔性聚合物阻变存储器件及机理研究

With rapid growth of mobile smart terminals such as wearable devices, flexible electronics system featuring with ultra-low power and small size has been dramatically developed. Among them, the information storage and access are essential functions, so the flexible memory especially flexible resistive random access memory (RRAM) to execute these functions has recently become a hot research field. However, flexible RRAM faces bottlenecks of power consumption and performance... To solve these issues, this project will do profound theoretical and experimental research on parylene polymer based flexible RRAM devices with ultra-low power and high performance, by the following approaches: material micro-structures and properties modulation including multilayer stacks, impurity functional group introduction, organic/inorganic composite technology, polymer unreacted terminal repairing and so on, combined with novel structure design and electrode materials optimization. These methods can reduce the operating voltage and current of the flexible polymer RRAM device, thereby reducing the power consumption, and improve the other performance of the speed, reliability and uniformity. .. The fruits of this project can promote the development of flexible RRAM technology with ultra-low power consumption and low cost, high performance and support lay the foundation for the research and application of flexible electronics.

随着可穿戴设备等移动智能终端的爆发式增长，超低功耗和微型化的柔性电子系统也得到迅猛发展。这些柔性电子系统都离不开信息的存储和读取，因此柔性存储器特别是柔性阻变存储器（Resistive Random Access Memory -RRAM）最近成为研究的热点。但是以有机材料RRAM为代表的柔性RRAM存在着功耗和性能的瓶颈。. 本项目针对这些重要瓶颈，拟研制超低功耗柔性parylene聚合物RRAM，通过阻变材料的堆栈结构、杂质功能团引入、有机无机复合技术、聚合物未反应终端修复、界面插层等聚合物材料结构、制备及其改性技术的创新研究，并结合RRAM器件新结构设计和电极材料的设计优化，降低柔性聚合物RRAM器件的操作电流和电压，从而降低功耗，并提高其速度、可靠性和均匀性等综合性能。推动低成本、超低功耗及高性能的柔性RRAM存储技术的发展，为柔性电子的研究和应用打下基础。

柔性聚合物阻变存储器是一种极具潜力的新型柔性非易失存储器，然而目前其仍面临着存储功耗高的问题，限制了其在超低功耗和微型化的柔性电子系统中的应用。为了解决器件存储功耗高的问题，本项目利用CAFM技术更直观、更深入地证实了parylene-C RRAM的金属导电细丝阻变机理，为后续器件的设计提供了理论指导。针对柔性电子系统对器件微型化、集成化的需求，本项目研制了基于parylene-C的柔性多功能温度传感-存储器件和基于parylene-C的柔性多功能光输入-存储模块。针对parylene-C RRAM器件存储功耗高的问题，本项目研制了两种超低功耗parylene-C RRAM器件的新结构，即双层parylene-C结构和石墨烯插入层结构，大大地降低了器件的存储功耗。其中，基于双层parylene-C的超低功耗柔性RRAM器件的存储功耗低至约10fJ/bit，远小于美国国防部先进技术委员会（DARPA）对未来新型存储器的功耗要求1pJ/bit,为超低功耗柔性RRAM器件的应用奠定了基础。相关成果申请5项专利，在包括AEM，IEEE-EDL，IEDM以及Nanoscale等著名期刊和国际会议上发表学术论文26篇学术论文和一本专著章节。