富硅氮化硅与石墨烯的混合光波导的光学非线性研究

Photonics platforms with high nonlinear figures of merit are sought after for their ability to process optical signals with high efficiencies. CMOS-compatible platforms are especially significant owing to their ability to be manufactured alongside electronics. This project focuses on the nonlinear optical investigation of graphene-integrated silicon-rich nitride waveguide. First, silicon-rich nitride (SRN) with high refractive index and negligible nonlinear absorption, will be prepared by PECVD at low temperature. Then, the linear and nonlinear optical properties of SRN-based waveguide will be systematically investigated, to understand the fundamental physics. By accurate transfer of graphene onto SRN waveguide, different hybrid structures will be presented. The effect of grahene on Kerr nonlinearity, self-phase modulation and four wave mixing will be thoroughly studied. The success of this project would be very important in nonlinear optics, showing the potential of silicon-rich nitride and graphene and other two dimensional materials for the realisation of the future on-chip photonics.

为了实现超小体积、低能耗的单片高密度光电集成，硅基光子学成为世界范围内研究的热点之一。富硅氮化硅具有高折射率、非线性系数大、与CMOS工艺兼容等特点，因而在高速光开关、光耦合器等非线性光子学器件中具有广泛的应用前景。石墨烯因其独特的二维结构以及优异的光电特性，受到了广泛关注。其超高的非线性系数，使其在构建新型光子学器件中具有特殊的应用潜力。因此具有较强非线性的石墨烯和富硅氮化硅波导相结合将进一步提升整体的克尔非线性。本项目将围绕富硅氮化硅与石墨烯开展不同结构光波导器件的光学非线性的研究，主要包括自相位调制和四波混频效应。本项目拟通过结构设计和工艺优化，摸索并制备出更高质量、低损耗的富硅氮化硅光波导器件，研究不同耦合长度，不同位置的石墨烯在混合波导非线性效应中的重要作用。本项目的成功实施对富硅氮化硅及石墨烯等二维材料在光学非线性领域的应用具有重要意义，为未来光子芯片集成的实现提供坚实基础。

为实现光子芯片集成的高效率光学信号处理，具有高折射率、高非线性系数、与CMOS工艺兼容，且不含双光子吸收等特点的富硅氮化硅，极具潜力成研究与应用的光子学平台。本项目将围绕富硅氮化硅与石墨烯开展不同结构光波导器件的光学非线性现象的研究。首先通过精确控制等离子体增强化学气相沉积法生长条件，实现低温条件下高折射率的均匀富硅氮化硅薄膜的生长；然后摸索并制备出高质量、低损耗的光波导器件，研究光波导的线性与非线性光学特性；其次研究石墨烯与光波导的耦合长度对光学非线性的影响，进一步理解富硅氮化硅光波导非线性物理机制；最后在上述研究基础上，对比不同混合波导结构中的非线性效应，主要包括自相位调制和四波混频效应，研究石墨烯的影响。本项目研究内容在光学非线性领域具有很强的前瞻性，蕴含着丰富的科学现象。本项目的成功实施对富硅氮化硅及石墨烯等二维材料在光学非线性领域的应用具有重要意义，为未来光子芯片集成的实现提供坚实基础。