100-500Gb/s超高速并行光收发器件模型、宽带及光电集成技术研究

Parallel optical interconnect technique is the crucial technique to solve large capacity data transmission problem in high speed transmission systems. The parallel mode can decrease transmit rate of every optical fiber, reduce the demands for optical devices and decrease the cost of optical interconnect. This project will research the crucial technique of international leading 100-500Gb/s parallel optical transceiver in SiGe BiCMOS technology. The microwave and millimeter wave frequency optical transceiver integrated circuits is different from simplex analog circuits, and it should solve the problems of models, bandwidth and optoelectronic integrated and perform down-top innovations . This project will model SiGe passive and active devices of microwave and millimeter wave frequency firstly; Then the ultra-high speed integrated circuits broad band technique will be researched; Above all, the new architecture of 4×25Gb/s and 4/12×40Gb/s parallel optical transceiver integrated circuits in BiCMOS technology will be exploited; Finally, the parallel optical interconnect integrated chip technique will be researched. This high speed parallel optical electronic integrated transceiver has the characteristic of high speed, high density, high integrated and low power, and the specifications has achieved the international advanced standards. The implement of this project will promote our optical interconnect technique to a new data rate level.

并行光互连技术是高速传输系统中解决大容量数据传输问题的关键技术，并行方式可以降低每根光纤的传送速率，降低对光器件的要求，减少光互连成本。本项目拟采用SiGe BiCMOS工艺对国际前沿的100-500Gb/s并行光收发关键技术进行研究。对于微波毫米波频段超高速光收发集成电路，有别于单纯模拟电路，需要解决模型、带宽和光电集成等各方面问题，自底向上实现创新。本项目首先对微波毫波频段SiGe无源与有源器件进行建模； 研究超高速集成电路带宽拓展技术；在此基础上，探索BiCMOS工艺条件下4×25Gb/s和4/12×40Gb/s并行光收发集成电路新型架构形式；最后对并行光互连集成芯片技术进行研究。该高速并行光电集成收发机具有高速化、高密度、集成化、低功耗的特征，项目指标达到国际先进水平，项目的实施将使得我国光互连技术提升到一个新的速率等级。

本项目采用SiGe BiCMOS工艺研究了100-500Gb/s并行光收发器件模型、宽带和光电集成技术。首先对微波毫波频段SiGe无源与有源器件进行建模，从解析建模、三维电磁仿真等方面入手，为深亚微米SiGe工艺量身定制工作频率40GHz的无源与有源器件模型；研究超高速集成电路带宽拓展技术，研究采用电感并联峰化、有源电感、有源反馈、电容退化、fT双倍增强等电路带宽拓展技术，使得在0.13µm SiGe BiCMOS工艺条件下，总模块电路达到32GHz的带宽；在此基础上，探索BiCMOS工艺条件下4×25Gb/s和12×40Gb/s并行光收发集成电路新型架构形式，分别设计了接收端跨阻放大器集成电路以及发送端驱动器集成电路芯片套片，跨阻放大器输入级采用共基极放大器形式就可以提供足够低的输入阻抗，并且BJT管作为输入管具有较低的集电极寄生电容，使得反馈电阻可以尽量的增大而较小地影响带宽；发送端DRV的驱动级采用了电阻电容退化技术和负密勒电容交叉反馈技术来拓展带宽，达到单路40Gb/s的数据速率；对上述集成电路进行了流片和芯片测试；最后对并行光互连集成芯片技术进行研究，实现100-500Gb/s并行光收发模块，该高速并行光电集成收发机具有高速化、高密度、集成化、低功耗的特征，总数据速率达到了400Gb/s, 项目指标达到了国际先进水平。