室温高电子迁移率晶体管的太赫兹混频探测器优化研究

Terahertz radiation has been widely used in biomedical imaging, security check, astronomical observation and other areas, due to its unique features and characteristics including high frequency, high transparency and ultrashort pulse. Maturity and development of terahertz detection is the precondition of terahertz technology application. The purpose of this project is to explore the technology of terahertz detection. Aiming at the deficiencies in micro-gate mixer device, such as poor responsivity and low sensitivity, low frequency and narrow band, focuses on THZ antenna with high electron mobility transistor (HEMT devices) mutual coupling mechanism, we focuses on the mutual coupling mechanism between THZ antenna and high electron mobility transistor. In order to reduce the shielding effect of transverse electric field in the effective workspace, the three-dimensional integration of antennas and HEMT device is is adopted. By employing the technology of FDTD simulation, the processing technology of semiconductor devices and terahertz photoelectric testing technology, a complete set of optimization scheme will be established from theory and experiment. By this method, high response, high frequency and broadband detection will be finally achieved in micron-gate devices..

太赫兹辐射具有高频、高透视性和超短脉冲等特性而被广泛应用于生物医学成像、安全检查和天文观测等众多领域。太赫兹探测技术的成熟和发展是太赫兹技术得以应用的前提。本项目的研究目的在于探索基于高电子迁移率晶体管的太赫兹混频探测技术。针对微米栅混频器件中存在的不足，如响应度差、灵敏度低、探测频率低和探测频带窄等问题，重点研究太赫兹天线与高电子迁移率晶体管（HEMT器件）的相互耦合作用机制。采用天线跟HEMT器件立体集成的方式，减小栅极天线对有效工作区内横向电场的屏蔽作用。通过模拟仿真技术、微纳器件加工技术和太赫兹光电测试技术从理论和实验上建立一套完整的器件性能优化方案，实现微米栅器件的高响应度、高频和宽频探测目标。

太赫兹辐射具有高频、高透视性和超短脉冲等特性而被广泛应用于生物医学成像、安全检查和天文观测等众多领域。太赫兹探测技术的成熟和发展是太赫兹技术得以应用的前提。.本项目的研究目的在于探索基于高电子迁移率晶体管的太赫兹混频探测技术。项目针对现有GaN/AlGaN自混频探测器中存在的不足，如响应度差、灵敏度低、探测频率低和探测频带窄等问题，围绕三极子碟形天线特征尺寸优化、滤波器增强、硅透镜集成和测试方法优化等四个方面开展研究。1)优化设计了三极子碟形天线特征尺寸，通过缩短源漏天线间距使器件的响应度提高了约4倍；2)通过引入太赫兹低通滤波器，使器件的响应度提高了约4.5倍；3)通过探测器单元器件跟超半球硅透镜的集成，在77K下器件的响应度达到100 kV/W，噪声等效功率降至1 pW/Hz0.5；4)通过对黑体辐射源的频谱测试，模组探测器的响应带宽达到了0.3THz-3THz。