高电子迁移率晶体管太赫兹探测器的天线匹配设计与探测机理研究

The high electron mobility transistor (HEMT) terahertz (THz) detectors based on the two-dimensional electron gas (2DEG) have many advantages, such as high speed, high sensitivity, high frequency resolution and ability of working at room temperature. What more, HEMT THz detectors have simple structures and are easy to process and integration. Despite of the great progress during the last decade, HEMT THz detectors still have the problems of low coupling efficiency and response. Special antenna design is one of keys to solve this problem. But the narrow-band antennas had not been researched adequately and the responsivity of such structures were not analyzed in detail，leaving an obvious gap in a design methodology. According to the above, this project will be devoted to the research on the narrow-band antenna design for HEMT THz detectors, including impedance matching and polarization match. This project will try to design matching antennas structures, increase the responsivity of the devices and explores the principles of antenna design for HEMT THz detectors.

基于二维电子气的高电子迁移率晶体管（HEMT）太赫兹（THz）探测器具有高速、高灵敏度、高频率分辨性、室温工作等优势。该类器件结构简便、易于加工和集成，成为目前太赫兹探测领域研究的热点。目前HEMT太赫兹探测器面临着耦合效率低，响应度不高的问题。这与HEMT太赫兹探测器的天线结构设计直接相关。目前世界范围内对HEMT 太赫兹探测器的研究多是为了宽频带探测，很少有研究者对窄带天线进行针对性的研究和设计。鉴于以上情况，本项目从天线的阻抗匹配和极化匹配基本原理出发，探索符合HEMT 太赫兹探测器探测原理的天线设计理念。通过设计阻抗匹配和极化匹配的天线结构，提升器件的响应度，力争对HEMT太赫兹探测器天线耦合太赫兹波的物理机制有清晰了解并为HEMT太赫兹探测器的天线结构设计提供新思路。

基于场效应晶体管的太赫兹探测器具有高速、高灵敏度、高频率分辨性、室温工作等优势。该类器件结构简便、易于加工和集成，成为目前太赫兹探测领域研究的热点。目前场效应晶体管太赫兹探测器面临着耦合效率低，响应度不高的问题。这与探测器的天线结构设计直接相关。本项目从天线和晶体管太赫兹探测器的基本原理出发，探索符合场效应晶体管太赫兹探测器探测的天线设计理念，首次揭示了天线的性能参数与探测器响应度之间的定量关系，指明了影响探测器响应度的关键天线参数；系统研究了晶体管太赫兹探测器的衬底效应，为晶体管太赫兹探测器衬底厚度的选择提供了理论指导；提出了两种不同的天线设计模型和理念；最终通过仿真设计、流片、封装和测试，最终制备出集成了90μm蝶形天线，中心频率在227GHz，栅长为135nm的GaN HEMT THz探测器，经过测试器件响应度超过到2kV/W，噪声等效因子低至62.15 pW/Hz0.5。