多频等离子体溅射沉积Ag掺杂a-SiCxOy发光材料的研究

Multi-components films with special structure and properties, such as BaYCuO high-Tc superconductor, HfTiO high-k material, amorphous SiCOH and Al:ZnO luminescence materials, are very important materials recently and cause an increasing interest in the field of physics and material science. Because the properties of multi-components films depend on their components and structures largely, the control of components and structures is a major factor influencing material properties. In this project, we propose a new method to prepare multi-components Ag-doped amorphous silicon oxycarbide (a-SiCxOy) photoluminescence (PL) films by 60MHz very-high-frequency (VHF) and 2MHz low-frequency (LF) co-sputtering Ag and SiC targets combined with 13.56MHz radio-frequency enhanced O2 inductive coupled plasma (ICP), and investigate the mechanism on control of components and structures of multi-components films. Due to the difference in ion energy distribution, plasma density and electron energy distribution for 60MHz, 2MHz and 13.56MHz discharge plasma, the sputtering driven by 60MHz and 2MHz is largely different from that of 13.56MHz. Therefore, in this project, the major investigations include the basic physics problem on very-high-frequency (VHF) and low-frequency (LF) sputtering, the mechanism on control of components and structures of multi-components films, and the relationship between photoluminescence property and components, structural characteristics of Ag-doped amorphous SiCxOy photoluminescence films. By these works, we will solve some basic physics problems on preparation of multi-components films by multi-frequency sputtering, and develop some new technology to prepare multi-components films.

具有特殊结构和性能的多组元薄膜材料（如BaYCuO高Tc超导材料、HfTiO高k材料、非晶SiCOH及Al:ZnO发光材料）是物理学、材料科学领域不断增长的研究焦点。多组元薄膜材料成份、结构的调控是决定其性能优劣的主要因素。本项目提出采用甚高频（60MHz）和低频（2MHz）功率源驱动的共溅射、并以射频（13.56MHz）电感耦合等离子体辅助的沉积技术，以多组元Ag掺杂的非晶SiCxOy发光材料为研究对象，探索多组元薄膜材料成份、结构调控的新途径和新机制。项目通过研究甚高频(VHF)和低频(LF)等离子体溅射的基本物理问题、多组元薄膜材料组份和性能的调控机制、多组元Ag掺杂的非晶SiCxOy发光材料组份与结构演变及物性变化机制，解决多频等离子体溅射制备多组元薄膜材料的一些基本物理问题，发展多组元薄膜材料制备的新技术。

多组元薄膜材料组份和性能的调控极其关键，得到高度关注。多频等离子体的发展提供了组份调控的可能，促使了多频等离子体溅射沉积多组元薄膜基本物理问题的研究。.项目以多频等离子体溅射调控多组元薄膜的基本物理问题为目标，研究了多频率驱动的单靶、双靶溅射以及ICP、基片偏压增强的磁控溅射技术及基本物理问题，研究了Si、C、Ag、SiCx薄膜溅射的驱动频率效应，研究了Ag掺杂SiCx薄膜材料的组份调控技术，获得了多组元薄膜材料的组份调控途径,完成了申请书预定的目标。. 项目开展的主要工作是：（1）射频、甚高频单（双）靶磁控溅射等离子体特性的驱动频率效应；（2）ICP增强的射频、甚高频磁控溅射等离子体特性的驱动频率效应；（3）ICP、基片偏压共同增强的甚高频磁控溅射等离子体特性；（4）Si、C、Ag、Si1-xCx薄膜溅射的驱动频率效应；（5）Ag掺杂Si1-xCx薄膜组分调控的驱动频率效应。. 项目取得的重要成果是：（1）将双频等离子体技术拓展到溅射领域，研究了多种频率组合的双频双靶磁控溅射等离子体特性，发展了部分解耦的双频双靶磁控溅射技术，为多组元薄膜的成分独立调控提供了有效途径。（2）研究了多种频率驱动的磁控溅射等离子体特性，发现甚高频（60MHz）磁控溅射等离子体呈现低电子密度、高电子温度、高离子能量、低离子通量的特性，提出甚高频磁控溅射用于薄膜微量掺杂、超薄薄膜制备的重要技术应用，拓展了磁控溅射技术的应用领域。（3）发展了ICP增强的甚高频磁控溅射、ICP 放电和基片偏压共同增强的甚高频磁控溅射新技术，有效地解决了甚高频磁控溅射应用的低沉积效率问题，拓展了甚高频磁控溅射的应用领域。（4）研究了多频率溅射的Si1-xCx薄膜性能，发展了利用驱动频率调控Si1-xCx薄膜成分的技术途径，实现了高富硅碳化硅薄膜制备，对新型光电器件发展具有促进作用。（5）研究了Si、C、Ag薄膜溅射沉积的驱动频率效应，提出通过溅射驱动频率调控Si、C、Ag薄膜结构和性能的技术途径，对于这些薄膜的制备及其应用具有指导作用。