金属氧化物量子点复合非晶氧化锌基薄膜晶体管的构筑及电输运性质研究

Thin film transistors are facing the critical challenges of high electronic performance and large area deposition at low temperature, in order to meet the development needs of new transparent electronics. Therefore, this project will discuss a new design idea of thin film transistors for the first time: high performance hybrid thin film transistors with amorphous ZnO-based thin film will be deposited by embedding metal oxides quantum dots based on a optimized sol-gel process at low temperature. Moreover, the effect of concentration and size of oxides quantum dots, and annealing temperature on the properties of the hybrid thin film transistors, will be researched based on experimental and theoretical investigations. Furthermore, the electrical transport properties of metal oxide quantum dots composite amorphous ZnO-based thin film, and the relationship between microstructure and properties will be revealed. The achievements of the project will provide theoretical basis for development of high performance hybrid thin film transistors.It will obtain high performance hybrid thin film transistors with a mobility of 50 cm2/Vs, a low working voltage of 5 V, and a small subthreshold swing of 200 mV/dec. The achievements of the project will provide technology and mechanism for development of the high performance thin film electronics based on the plastic substrate.

薄膜晶体管为满足新型透明电子的发展需求，正面临着高性能和低温大面积沉积共存的关键性挑战。为此，本项目拟探讨一种全新薄膜晶体管的设计思路：采用优化的低温溶胶凝胶法研制大面积均匀的金属氧化物量子点复合非晶氧化锌基薄膜，将其作为半导体沟道层以制备高性能薄膜晶体管，着重从理论和实验上研究氧化物量子点的浓度、尺寸以及退火温度对复合非晶氧化锌基薄膜晶体管性能的影响规律，揭示氧化物量子点复合非晶氧化锌基薄膜的电子输运机理，阐明复合薄膜的微观结构和器件性能之间的关系，从而为指导设计出更高性能复合薄膜晶体管提供理论依据；期望研制出载流子迁移率达到50 cm2/Vs，工作电压小于5 V和亚阈值斜率小于200 mV/dec的高性能薄膜晶体管阵列，并为将其推向基于塑料基底的高性能薄膜电子提供技术支持和机理参考。

凭借优良的光电特性，ZnO基薄膜晶体管有望成为最具潜力的下一代平板显示器的核心元件之一，然而ZnO基薄膜晶体管却面临着高性能和低温制备共存的关键性问题。为此，本项目探讨低温制备高质量ZnO基薄膜材料及其相关材料；设计、构筑高性能金属离子掺杂ZnO基薄膜晶体管，改善其场效应晶体管载流子迁移率，提升器件的电学性能和偏压稳定性；研究金属离子掺杂ZnO基薄膜中的电子传输的本质特性，研究掺杂薄膜的微观结构与器件性能之间的关系，如载流子迁移率，开关比，亚阈值摆幅，偏压稳定性等之间的规律，从而获得高性能ZnO基薄膜晶体管及其电子输运机理，同时还对ZnO基及其相关的纳米材料的后期应用研究做了初步的探索。