透明/非透明柔性SiC场发射电子源的设计与制备及其性能研究

This project is to choose the high temperature wide-band-gap, third-generation semiconductors, SiC, as the research subject, and the pyrolysis of the organic precursor as a synthesis strategy for the growth of flexible and transparent/non-transparent SiC nanoneedle-arrays on the carbon fabric. We will try to realize the design and preparation of the high-performance flexible SiC (undoped and n/p type) field emission electron sources that are enhanced by the following effects: sharp nanotips and band regulation, via accurately tailoring doping and structures of SiC nanostructures. Specifically, we will deeply analyze the experimental results to reveal the intrinsic relationship between various factors including the SiC nanoarray structure, doping, strain, conductivity, work function (or electron affinity) as well as the device performance, with the emphasis on the classification of the field emission mechanism of the flexible SiC nano-array based electron source. The implementation of this project will provide some valuable basic data and key technologies for the fundamental research and fabrication of the flexible and transparent/non-transparent SiC based field emission devices.

本项目拟以第三代宽带隙高温半导体SiC 为研究对象，以石墨烯薄膜和碳布为衬底，以有机前驱体热解生长工艺制备SiC纳米针尖阵列，通过结构与掺杂的精细调控， 实现纳米微尖、 能带调控（良好导电率、低功函数或电子亲和势)增强的，性能优异的柔性透明/非透明的SiC纳米阵列(本征和n/p型)场发射源的生长与结构设计。项目工作将系统评价柔性SiC纳米阵列结构、掺杂、应变、导电性、功函数(或电子亲合势)及性能等内在关联。阐明柔性SiC纳米阵列电子源场发射机理。项目的实施将为柔性透明/非透明SiC纳米阵列场发射电子源的基础研究和器件化提供一定的基础数据和关键技术。

本项目以第三代宽带隙高温半导体SiC 为研究对象，以石墨烯薄膜和碳布为衬底，以有机前驱体热解生长工艺制备SiC纳米针尖阵列，通过结构与掺杂的精细调控， 实现纳米微尖、 能带调控（良好导电率、低功函数或电子亲和势)增强的，性能优异的柔性透明/非透明的SiC纳米阵列(本征和n/p型)场发射源的生长与结构设计。项目工作系统评价了柔性SiC纳米阵列结构、掺杂、应变、导电性、功函数(或电子亲合势)及性能等内在关联。阐明了柔性SiC纳米阵列电子源场发射机理。课题进展4年来，发表论文6篇，其中SCI/EI论文4篇，授权发明专利1项，申请发明专利2项。相关工作为柔性透明/非透明SiC纳米阵列场发射电子源的基础研究和器件化提供一定的基础数据和关键技术。