基于有机衬底的全透明柔性非晶ZnSiSnO薄膜晶体管研究

With the development of display technology, the fully transparent and flexible thin-film transistors (TFTs) based on amorphous oxides have been the hot issue for research. In this project, we propose a new indium-free ZnSiSnO amorphous semiconductor for fabricating TFTs, with the emphasis of the study of key techniques of fully transparent and flexible ZnSiSnO TFTs. By adopting the novel plasma treatment technique with a low-temperature heating process and the designed Al2O3-TiO2 (ATO) barrier and buffer layer, high-quality amorphous ZnSiSnO thin films are grown by magnetron sputtering under optimized growth conditions. The stability mechanism of properties is theoretically analyzed on the basis of the first-principles calculations with density functional theory. ZnSiSnO TFTs are fabricated on organic substrates such as PET by exploring the device-fabrication process, with ATO composite films as the insulator layer, amorphous ZnSiSnO films as the channel layer, Al-doped ZnO (AZO) films as the grid, source, and drain electrodes. The device behaviors are improved by the instantaneous pulsed-laser annealing technique, which is also one of the creative methods in our project. Based on the theoretical and experimental observations, the electrical, optical, structural, and mechanical properties, as well as their stabilities, will be studied in detail to reveal the relations and rules. The goal of this project is to fabricate the fully transparent and flexible ZnSiSnO TFTs for practical applications. This work will be in favor of the development of transparent electronics and provide the key materials and techniques for the next-generation transparent and flexible display devices.

随着显示技术发展，基于非晶氧化物的全透明柔性薄膜晶体管（TFT）成为研究热点。本项目提出一种无In的ZnSiSnO非晶半导体新材料，以全透明柔性ZnSiSnO TFT关键技术为核心开展研究。利用磁控溅射方法，采用创新的低温加热与等离子体处理技术，设计Al2O3-TiO2（ATO）阻隔与缓冲层，优化工艺，室温生长高质量非晶ZnSiSnO薄膜；基于第一性原理方法，进行理论分析，揭示ZnSiSnO性能稳定机制。以PET为有机衬底，ATO为绝缘层，非晶ZnSiSnO为沟道层，Al掺杂ZnO为栅极、源极和漏极，室温制备ZnSiSnO TFT，采用创新的瞬时脉冲激光退火技术，提高器件性能。理论与实验相结合，系统研究材料和器件的电学、光学、结构和力学性能及其稳定性，揭示内在规律，研制高性能的全透明柔性ZnSiSnO TFT。本项目研究将促进透明电子学的发展，为新一代柔性显示器件提供关键材料和技术支持。

随着显示技术发展，基于非晶氧化物的全透明柔性薄膜晶体管（TFT）成为研究热点。本项目提出了无In的ZnMSnO（M=Si、Al、Nb、Ti）新型非晶氧化物半导体（AOS）材料体系，以无铟AOS薄膜与透明柔性TFT关键技术为核心开展研究。利用磁控溅射、脉冲激光沉积、溶液燃烧等方法，生长出非晶ZnMSnO（M=Si、Al、Nb、Ti）薄膜；基于第一性原理方法，进行理论分析，揭示ZnMSnO的性能及其稳定机制；采用创新的低温加热与等离子体处理技术，设计Al2O3-TiO2（ATO）阻隔与缓冲层，优化工艺，室温生长高质量非晶ZnMSnO薄膜；以PET为有机衬底，ATO为绝缘层，非晶ZnMSnO为沟道层，Al掺杂ZnO为栅极、源极和漏极，室温制备ZnMSnO TFT，采用创新的瞬时脉冲激光退火技术，提高器件性能。基于研究中的发现，重点开展了ZnAlSnO TFT的研究。理论与实验相结合，系统研究材料和器件的电学、光学、结构和力学性能，系统评估了AOS TFT在各种环境中的稳定性和耐候性，揭示内在规律。研制出高性能的无In的ZnMSnO TFT，非晶ZnMSnO薄膜电阻率可在10^5-10^6 Ωcm有效调控，可见光透过率可达93%；透明柔性TFT场效应迁移率15.6 cm^2/Vs，开/关电流比高于10^7量级，阈值电压约3.2 V，亚阈值摆幅0.54 V/decade，漏电流在10^-12 A量级，器件的可见光透过率86%，具有良好的弯曲稳定性。本项目研究为AOS TFT的应用奠定了基础，促进了透明电子学的发展，为新一代透明显示和柔性显示提供关键材料和技术。