晶态碳化钨硬质合金薄膜室温生长与组分渐变技术研究

Tungsten carbide (WC), as a hard-alloy coating, has been used widely in military and civilian fields. To meet the requirement of low-temperature process in production, it is very necessary to realize the room-temperature growth of crystalline-state WC films, which is a key scientific matter and technical problem. In this project, we will carry out our research based on this issue. By the magnetron sputtering technique, crystalline-state WC films are grown at room temperature under controlled growth conditions, using W and WC as targets, stainless steel and so on as the substrate, and Ar-CH4 as the working ambient, with the emphasis of the designed W-WC gradient transition layer by the gradual change technology of components. The microstructures, components, mechanical properties, corrosion resistance, and high/low temperature resistance are analyzed in detail, displaying the internal relations among these behaviors and the controllable manner of deposition parameter on them. We will reveal the role of component gradual-change technology on the growth of crystalline-state WC films at room temperature and the influence rule of crystalline level on the physical and chemical properties of films, from which the internal mechanism will be well understood and the mechanism models will be developed. Based on the experimental observations and mechanism analyses, the room-temperature growth of crystalline-state WC gradient-alloy films can be realized under the controlled and optimized growth conditions, with high comprehensive properties including enhanced adhesion force between the film and matrix, which will certainly lead to the expanded application areas of WC films. This work will not only be in favor of the development of WC coating technology, but also provide the key materials and techniques of WC gradient-alloy films for applications in the field of abrasion/corrosion resistant and protective coatings.

碳化钨（WC）作为一种硬质合金涂层，广泛应用于军事和民用领域。为满足产品低温制程需求，晶态WC薄膜室温生长是目前亟需解决的关键科技难题，本项目以此为核心开展研究。利用磁控溅射方法，使用W和WC两种靶材，以不锈钢等为衬底，以Ar-CH4为工作气体，采用创新的组分渐变技术，设计W-WC梯度合金过渡层，调控工艺参数，室温下生长晶态WC薄膜。研究薄膜的微观结构、组分、力学性能、耐蚀性能、耐高温/低温特性等，探索上述性能之间的内在关系和工艺参数对性能的控制作用；阐明晶态WC梯度薄膜室温生长的组分渐变机制，以及晶态化程度对其物理化学性能的影响规律，揭示内在机理，建立理论模型。基于实验和理论分析，优化生长工艺，实现晶态WC梯度合金薄膜室温制备，与基体附着力强，具有优良的综合性能，拓展应用领域。本项目研究将促进WC涂层技术的新发展，为WC梯度薄膜在耐磨耐蚀和防护等领域的应用提供关键材料和技术。

碳化钨（WC）作为一种硬质合金涂层，广泛应用于军事和民用领域。为满足产品低温制程需求，晶态WC薄膜室温生长是目前亟需解决的关键科技难题，本项目以此为核心开展研究。利用磁控溅射方法，使用W和WC两种靶材，以不锈钢为衬底，以Ar-CH4为工作气体，采用创新的组分渐变技术，设计W-WC梯度合金过渡层，调控工艺参数，室温下生长出晶态WC薄膜。研究了薄膜的微观结构、组分、力学性能、光学性能和电学性能等，探索上述性能之间的内在关系和工艺参数对性能的控制作用；阐明晶态WC梯度薄膜室温生长的组分渐变机制，以及晶态化程度对其物理化学性能的影响规律，揭示内在机理，建立理论模型。本项目中，我们采用磁控溅射方法，利用缓冲层和组分渐变技术，设计出W-WC 梯度过渡层，提升WC 硬质合金薄膜的晶态化质量，实现晶态WC 薄膜室温生长；WC 梯度薄膜为多晶态，薄膜涂层显微硬度可达24 GPa；涂层与基体结合力高于35 N，与单层WC 薄膜相比提升50%以上；具有良好的耐磨性能。此外，我们还制备出兼具透明导电和硬质合金特性的WC薄膜。基于实验和理论分析，我们通过创新和优化生长工艺，实现了具有不同性能的WC薄膜的低温制备，具有优良的综合性能，显著拓展应用领域。本项目研究将促进WC薄膜技术的新发展，为WC薄膜在耐磨耐蚀、微电子等领域的应用提供关键材料和技术。