大面积二维六方氮化硼低温无转移制备及其在有机场效应晶体管中的应用

Two dimensional hexagonal boron nitride (2D h-BN), a material with an ideal dielectric van der waals surface, has great potential for application as a modification material of the dielectric layer in organic field effect transistors (OFET). Till now, large-area 2D h-BN has been produced by chemical vapor deposition (CVD), which usually needs high growth temperature and metal catalyst. As a result, a troublesome transfer process is needed, which introduces impurities, defects and wrinkles into the sample, causing a remarkable reduce of the device performance. Based on our previous work, to solve these problems, this project aims to develop a critical plasma enhanced CVD (c-PECVD) method, which realizes low-temperature transfer-free growth of large-area high-quality 2D h-BN films directly on various substrates, and to investigate the mechanism of the reversible reactions between growth and etching in c-PECVD. By controlling the nucleation and the critical equilibrium state of the reversible reactions, both the quality of the 2D h-BN sample and the controllability over the layer number and the growth position will be improved. Moreover, based on the research of 2D h-BN growth, this project will research its application in improving the device performance of OFET, and develop a reliable technology to fabricating the organic semiconducting layers on 2D h-BN. Successful outcomes for this project will lay a solid foundation in both material growth and device fabrication for the practical application of 2D h-BN in OFET.

二维六方氮化硼(h-BN)具有理想范德华介电表面，具备成为新一代有机场效应晶体管(OFET)绝缘层修饰材料的巨大潜力。目前已有的大面积合成技术是化学气相沉积(CVD)法。这种方法需要高温和金属催化，应用中需要复杂的转移过程，引入大量杂质、缺陷和褶皱，破坏了其范德华介电表面，对器件性能造成难以避免的影响。针对这些问题，本项目在已有工作基础上开发一种临界等离子体增强CVD法，低温下不需要转移，直接在衬底上生长大面积高质量二维h-BN晶体薄膜，同时研究该过程中生长和刻蚀的可逆反应机理。通过控制成核和对可逆反应临界平衡的调控，进一步提高二维h-BN薄膜质量，实现层数和生长位置的可控。在此基础上，研究二维h-BN 对OFET 界面性能改善以及对有机半导体层凝聚态结构影响的科学规律，开发与之适应的有机半导体层加工技术。该项目的实施将为二维h-BN在OFET中的应用及实用化奠定材料合成和器件工艺的基础。

二维六方氮化硼(h-BN)现有的大面积合成技术是化学气相沉积(CVD)法，在应用中需要复杂的转移过程，引入大量杂质、缺陷和褶皱，破坏了其范德华介电表面，对器件性能造成难以避免的影响。针对这些问题，本项目开发了一种临界等离子体增强CVD法，低温下不需要转移，直接在衬底上生长大面积高质量二维h-BN晶体薄膜，同时研究了该过程中生长和刻蚀的可逆反应机理。同时，该项目研究了将二维h-BN应用于场效应晶体管及其光电器件中，发现二维h-BN能够提升器件电学性能、改善界面散热、提高器件的稳定性能。该项目的实施将为二维h-BN在晶体管器件中的应用及实用化奠定材料合成和器件工艺的基础。.