面向三维微纳结构加工的光电化学刻蚀侧壁调控机理与方法研究

We propose a new three-dimensional (3-D) micro- and nanofabrication process by photoelectrochemical (PEC) etching of silicon with sidewall profile modulation. The new process can solve a long-term problem of making complex 3-D micro- or nanostructure in high-aspect-ratio (HAR) etching. In this work, we first study the sidewall profile modulation mechanism of PEC etching and build corresponding mathematical models. The models will then be integrated with Virtual Process (VP), in order to unveil the etching profile evolution. We then develop a PEC etching platform for experimental studies, overcome the long-term limitation on PEC-etched patterns, and discover the relationship between etching profile and etching parameters. After all, the proposed work will produce a new 3-D fabrication method with completed theories and reliable experimental data. In order to verify the feasibility of the proposed work, a newly designed superhydrophobic surface with controlled 3-D micro- and nanostructures will be fabricated using sidwall profile modulation of PEC etching.

针对微纳制造中传统高深宽比刻蚀工艺难以加工具有复杂侧壁形状的三维结构这一难题，本项目提出一种基于光电化学刻蚀侧壁调控技术的加工方法：探索硅基光电化学刻蚀侧壁形状控制机理，建立刻蚀过程的数学模型；结合虚拟工艺仿真技术，研究刻蚀结构空间演化规律；建立用于侧壁调控实验的光电化学刻蚀平台，突破原有工艺仅能加工周期性简单图形的限制，探索刻蚀侧壁形状与刻蚀参数之间的对应关系，进而形成一套面向复杂三维微纳结构加工，有坚实理论基础与可靠实验依据的光电化学刻蚀工艺方法；利用以上方法设计制备出面向水下长时间应用的强超疏水表面，验证整套工艺的实用性，力争为微纳制造领域提供一种新型加工手段。

针对微纳制造中传统高深宽比刻蚀工艺难以加工具有复杂侧壁形状的三维结构这一难题，本项目提出一种基于光电化学刻蚀侧壁调控技术的加工方法：探索硅基光电化学刻蚀侧壁形状控制机理，建立刻蚀过程的数学模型；建立用于侧壁调控实验的光电化学刻蚀平台，突破原有工艺仅能加工周期性简单图形的限制，探索刻蚀侧壁形状与刻蚀参数之间的对应关系，形成了一套面向复杂三维微纳结构加工，有坚实理论基础与可靠实验依据的光电化学刻蚀工艺方法；利用以上方法设计制备出面向水下长时间应用的强超疏水表面，验证了整套工艺的实用性，为微纳制造领域提供了一种新型加工手段。