反铁电陶瓷/聚苯乙烯柔性光子晶体与带隙场控机理研究

Functional ceramic material is used to study in tunable bandgap photonic crystal due to its unique field effect, but there are some shortages for ceramic photonic crystal, such as more high modulation field for phase change, and more low intensity that is not conducive to fabricate a large area photonic crystal. In this subject, we will fabricate anti-ferroelectric nano-phase ceramics powder of PbZrO3 and NaNbO3 that droped by Sol-Gel methed and grain size is 30-100nm. The component materials of anti-ferroelectric nano-phase ceramics powder/polystyrene are fabricated by using ultrasonic technology, and 3-D anti-ferroelectric ceramics/polystyrene flexible photonic crystals are fabricated by using the die-less direct writer device based on modeling and simulation in BandSOLVE software, and photonic crystals parameters including transmission spectrum, decay rate, adjustment rate of bandgap are studied in electric field modulation effect, and field control mechanism of photonic crystals bandgap is discussed. We propose to use the dual effects of lattice constant radical variability and dielectric constant mutation of the ferroelectric cramics at phase change point under electric field control to achieve the width improvement of tunable property of photonic band gap, and advantages of anti-ferroelectric ceramic and polystyrene materials are lightened for improving the intensity of photonic crystals in this project. Our work will be made a new progress in the anti-ferroelectric ceramics Nanoparticles, anti-ferroelectric ceramic/polystyrene composite, photonic crystal electric field regulation mechanism of the band gap, Promote the application of the anti-ferroelectric ceramic materials in the field of information technology in optical communications, optical interconnects, and integrated optoelectronic devices.

功能陶瓷材料由于其独特的场致效应常被用于可调带隙光子晶体的研究，但是存在相变调制外场较大、强度低不利于大面积制备等缺点。本项目采用Sol-Gel工艺制备粒径为30-100nm、改性的PbZrO3和NaNbO3反铁电陶瓷纳米粉体，通过超声技术与聚苯乙烯复合制浆，在BandSOLV软件仿真模拟的基础上，采用无模直写平台制备三维反铁电陶瓷/聚苯乙烯柔性光子晶体，并研究电场调制作用下光子晶体的透射谱、衰减率、带隙调整率等参数，探索光子晶体带隙的场控机理。本项目充分利用了反铁电陶瓷在电场调控相变点处晶格常数激变和介电常数突变的双重效应，实现光子晶体带隙的宽可调，并综合反铁电陶瓷与聚苯乙烯材料复合的优点，提高光子晶体的强度。本项目将在反铁电陶瓷纳米粉体制备、反铁电陶瓷/聚苯乙烯复合、光子晶体带隙的电场调控机理研究等方面取得新进展，推动反铁电陶瓷材料在光通信、光互联、集成光电子器件等信息技术领域的应用。

本项目首先采用Sol-Gel法制备出满足复合材料制浆要求的PbZrO3、NaNbO3、PBLZST陶瓷粉体（粒径30-100nm）。分别研究了PBLZST/PS复合材料先驱体的组分比、偶联剂和导电相对其介电可调性的影响，结果表明：随着陶瓷相含量的增加，PBLZST/PS复合材料的介电可调率会相应增大；偶联剂KH550虽然可改善复合材料有机相与陶瓷相界面耦合效应，提高PBLZST/PS复合材料的介电可调率，但效果并不显著；随着导电相碳粉、碳纳米管（CNT）、石墨烯（GNSs）片含量的增加，PBLZST/PS复合材料的介电可调率均呈现先升高后降低的趋势。同时从光子带隙结构理论出发，模拟计算了光子晶体结构参数，并利用CAD技术设计二维光子晶体图像，通过调整浆料的浓度，改变浆料的流变性及黏度，研究了气体压力、直写速度等工艺参数对直写光子晶体性能的影响。结果表明：有机溶剂DMF中改性PBLZST/PS复合材料质量分数为25wt%-30wt%，超声振荡1h，当黏度计的测量转速为60 r/min，悬浊液的的剪切速率为250s-1时，直写的气压为0.4 MPa左右，直写速度为1.2mm/s，然后将直写的光子晶体置于150℃的烘箱中烘2h，得到质量较好的光子晶体结构。最后，采用平面波展开法（PWE）和有限时域差分法（FDTD）研究了光子晶体波导、微腔和环形谐振腔等基本结构，为陶瓷光子晶体在光通信、光互联、集成光电子器件等信息技术领域的应用奠定了基础。依托于本项目的支持，课题组在Advanced Materials、ACS nano等高水平杂志上发表论文32篇，申请国家发明专利2项，同时培养四名硕士研究生，两名博士研究生，一名博士后研究人员，其中一名博士生成功申请一项校级研创项目，博士后研究人员成功申请了博士后面上基金，博士后特别资助基金以及青年科学基金项目，并且在本项目的研究基础上，课题组又成功申请一项国家基金面上项目。