锑基多量子阱核壳纳米线的生长及发光特性研究

Semiconductor nanowire laser is a frontier subject in the field of laser technology, infrared range laser is of great importance for military and civilian areas, which has a more important research significance. The structure of semiconductor nanowire laser, the total gain and the loss in the cavity are the key problems of the performance of nanowire lasers based on Fabry-Pérot (FP) cavity. By optimization of the gain medium and the structure of the resonant cavity of FP cavity nanowire laser, we carry out the research work of “The growth and optical properties of antimony based multi quantum well core/shell nanowires”. Utilizing AlGaSb/GaInSb quantum well and GaSb nanowires to obtain GaSb multi quantum wells core-shell nanowires, which could enhance the optical confinement ability and oscillation of longitudinal modes in a gain medium; to solve the problem of high cavity loss, GaSb/AlAsSb DBR layers are inserted at the interface of nanowires and substrate, which could suppress the local scattering center effect introduced by nanowires facet. The stimulated emission characteristics of GaSb nanowires were investigated by optically pumped experiments. Finally, mid infrared range optically pumped stimulated emission of GaSb nanowires based on FP cavity with high gain and low loss could be obtained.

半导体纳米线激光器是激光技术领域的前沿课题，中红外波段激光具有重要的军用和民用价值，因此开展该波段半导体纳米激光器研究具有重要研究意义。半导体纳米线激光器结构，纳米线激光器的总增益和腔内损耗是提高纳米线激光器性能的关键问题。本课题从优化FP腔纳米线激光器增益介质和谐振腔结构方面，开展“锑基多量子阱核壳纳米线的生长及发光特性研究”的研究工作。利用AlGaSb/GaInSb量子阱与GaSb纳米线构成的GaSb多量子阱核壳纳米线结构，提高光学限制能力进而实现增益介质内纵模的有效振荡；在GaSb纳米线与衬底界面处引入分布式布拉格反射层GaSb/AlAsSb (DBR)，提高端面的镜面反射效应，抑制端面的局域散射中心效应所引发的腔内损耗过高问题；通过光泵浦受激发射实验，分析GaSb纳米线的激射特性。最终实现高增益低损耗的FP腔GaSb纳米线激光器中红外波段的光泵浦受激发射。

本项目开展了“锑基多量子阱核壳纳米线的生长及发光特性研究”的工作，从FP腔纳米线激光器结构设计及理论计算、GaSb薄膜外延生长及物性研究、GaSb纳米线生长控制及物性研究、GaSb多量子阱核壳纳米线生长控制及物性研究、光泵浦受激发射特性研究五个方面展开研究。通过理论计算及模拟的方式从设计上优化了纳米线尺寸与结构和DBR结构与壳层量子阱结构以实现激射模式的选择和激射阈值的降低；使用分子束外延设备生长制备了GASb薄膜量子阱，研究了生长制备过程中相关参数对量子阱的影响；在气-液-固生长机理指导下，研究了纳米线中的晶相控制，实现了GaSb基纳米线的生长；通过对生长过程中的参数控制，实现了GaSb基核壳量子阱中量子阱参数的调控，并对其光学性质进行了研究；在得到高质量GaSb基量子阱纳米线后，通过纳米线中参数控制提高了纳米线发光性能，并实现了光泵浦受激发射。