基于SiGe HBT的SiGe 微波单片低噪声放大器（MMIC LNA）质子辐射损伤机理研究

For exploring the performance degradation mechanisms of SiGe MMIC LNA induced by proton irradiation, The characteristic parameters of SiGe MMIC LNA changed with proton irradiation condition, LNA circuit technology and bias status, environment temperature and other factors, etc., will be simulated with multi-scale coupling methods including Monte Carlo technique, numerical calculation and circuit simulation measures. The physical microscale mechanisms of the LNA characteristic parameters evolution induced by proton will be revealed.The main influence factors leadding to the key performance parameters degradation shall be determined. The relation of the radiation sensitive parameters of LNA changed with the displacement damage and ionizing radiation effects distribution induced by proton irradiation will be explored..The experimental circuit for measuring the radiation snesitive parameters of SiGe MMIC LNA samples will be designed. The proton beam energy spectrum and dosimetry measurement techniques based on Si array semiconductor detector and solid-state track detector will be setup. Comparing the experimental and simulated results, deeply analyzing the proton radiation damage mechanisms of SiGe MMIC LNA, the calculation physical model for SiGe MMIC LNA proton radaition damage effects evalution will be developed furtherly. The relationship for the LNA radiation sensitive parameters degradation trend changed with proton irradiation condiation, LNA micro-scale displacement damage and ionization dosimetry will be explored. Finally, the performance degradation of SiGe MMIC LNA induced by space proton irradiation will be theoretical simulated and studied. The prediction method for LNAs sensitive parameters degradation induced by space proton irradiation will be explored according to the above experimental measurement and theoretical simulation results.

为探索质子辐照SiGe MMIC LNA性能退化损伤机制，拟采用蒙卡模拟、数值模拟及电路仿真多尺度耦合方法，模拟计算SiGe MMIC LNA特性参数随质子辐照条件、电路工艺、偏置状态及环境温度等因素的变化，揭示质子辐照引起LNA特性参数演变微观物理机制，明确LNA关键性能参数退化主要影响因素。探讨LNA辐射敏感参数变化与质子辐照在LNA引入的微观位移损伤及电离效应之间的表征。设计SiGe MMIC LNA辐射敏感参数测试电路，建立基于Si阵列探测器及固体径迹探测器的质子能谱、剂量测量方法。对比SiGe MMIC LNA实验与模拟结果，深入分析LNA质子辐射损伤机理，完善模拟物理模型；探索LNA质子辐照敏感特性参数与质子辐照条件、LNA位移损伤及电离剂量之间的关系。开展SiGe MMIC LNA空间质子辐照性能退化理论模拟研究，综合模拟及实验结果，探索空间质子辐照LNA性能退化理论预估方法

为预估近地空间典型轨道质子辐射损伤对SiGe MMIC LNA 工作可靠性的影响；首先基于Space Radiation、Geant4、SRIM、Lammps、TCAD、Cadence及ADS等模拟工具，建立了基于SiGe HBT的SiGe LNA特性参数（S参数、噪声系数NF）空间质子辐照损伤多尺度模拟分析方法；基于蒙卡方法计算分析了典型能量质子（3MeV~800MeV）在LNA材料中的能量沉积、初级反冲粒子（PKA）谱等参数随入射质子能量的分布特征；数值模拟了质子辐照微观位移损伤缺陷时空演化特征及SiGe LNA有源器件质子辐照损伤特性参数退化机制，利用设计的基于SiGe HBT的Cascode结构SiGe LNA，模拟分析了质子辐照损伤LNA特性参数变化趋势。探索了基于参数提取的Si BJT SPICE辐照模型建立方法，探讨了基于Si BJT辐照模型的Si LNAs总剂量效应关键性能参数退化预估方法。. 其次，开展了典型工艺Si BJTs、SiGe HBTs、SiGe MMIC LNAs 60Co γ总剂量效应TID及初步的TID与传导型电磁干扰EMI协合效应实验研究，分析对比了样品特性参数变化机制及主要影响因素。利用宽量程丙氨酸剂量计监测了样品辐照总剂量，分析了基于UNDOS剂量计预估的辐照总剂量与丙氨酸剂量计测量结果的差异。实验研究了SiGe MMIC LNAs质子辐照损伤特性参数（S 参数、NF、P1dB压缩点）随质子能量（3MeV~10MeV）、注量、样品偏置条件等因素的变化机制及质子损伤阈，对比了与模拟结果变化趋势的一致性；设计了变增益质子能谱探测器前端读出ASIC电路模型，同时基于VA32TA32设计研制了质子能谱探测器前端读出系统。最后初步开展了SiGe MMIC LNAs反应堆脉冲中子-γ、重离子实验研究；本项目研究结果为SiGe MMIC LNA极端环境工作可靠性评估及其核加固优化设计提供了相关技术基础。