基于回转器原理的硅基射频和超宽频带集成有源电感的合成方法及其应用研究

Inductors are extensively used in the design of radio-frequency integrated circuits(RFIC). On-chip passive inductors (PI) occupy a large part of overall RFICs chip area, and also have the disadvantages such as low quality-factor (Q), low self-resonance frequency, non-tunable ability of inductance and Q. Therefore, on-chip passive inductors become difficult to meet the RFIC requirements for small size, low cost, high level integration, wide frequency operation range, and performance tunablity. Active inductors(AI) synthesized with transistor-only become a vital candidate for replacing on-chip passive inductors. However, active inductors at present have insufficiently high operation frequency, narrow bandwidth range, and lack of methods to concurrently achive multiple good performance parameters in an active inductor. This project takes high frequence and ultra-wide band active inductors as the object of investigation, wide frequency operation range, high Q, wide tunable range as main targets, the synthesis methods of AIs as main lines. Multiple simultaneous feedbacks techniques, the combination techniques of coarse tuning by circuit bias and auxiliary fine-tuning via varactors, the branch circuit current tuning techniques, and the negative capacitance offsetting technique are adopted to explore concurrently achieving multiple good performance parameters in an active inductor. A suit of optimization sythesis methods will be poposed to accommodate the RFICs design requirement for active inductors with different performance parameters. Taking broadband low noise amplifier (LNA) design as example, the synthesized high frequency active inductors as a substitute for area-consuming on-chip spiral passive inductors is employed to tune gain and bandwidth of LNA taking full advantage of the tunablity of active inductors. The tunable methods by active inductor provide a way to design performance reconfigurable RFICs.

电感广泛地用于集成电路(RFIC)设计中.在片无源电感(PI)占用了大部分RFIC芯片面积，且品质因子(Q)和自谐振频率低，电感值和Q值不能调节，越来越不能满足RFIC小尺寸、高集成、低成本、宽频带、性能可调节的发展需求.采用全晶体管合成的有源电感(AI)成了取代PI的重要选择。但目前AI工作频率偏低，工作频带窄，电感、Q值和带宽不能独立调节。本项目以高频、高性能AI为研究对象，以宽频带、高Q、宽调谐范围为主要目标，以合成技术为主线，采用多重反馈技术、电路偏置调节为主和可变电容细调为辅技术、分流支路调节技术、负电容补偿技术，探索兼顾多个优良性能参数于一体的AI协同调节机制，形成一套不同性能参数AI合成的优化方法，为向RFIC设计所需的不同性能AI提供技术支持。以宽带低噪声放大器设计为例，利用AI的可调节性，对增益和带宽进行调节，为重配置RFIC设计提供新途径。

射频集成电路（RFIC）中所使用的在片无源螺旋电感(PSI)占用了其大部分芯片面积，且品质因子(Q)和自谐振频率（fsr）低，电感值L、Q值和fsr不能调节，越来越不能满足RFIC向小尺寸、高集成、低成本、宽频带、性能可调节发展的需要。本项目对采用晶体管合成的小面积、性能可调谐的有源电感(AI)进行研究：(1)创新性地提出了采用共集-共射+Cascode结构+可调分流支路+可调有源电阻结构的电路拓扑，实现了兼有大电感L 值、高品质因子Q 值的有源电感；(2)创新性地提出了采用共射（CE）-共基（CB）-共集（CC）结构+可调有源电容+可调有源电阻结构的有源电路拓扑，实现了电感值L、品质因子值Q 可大范围调节和独立调节的新型有源电感；(3) 创新性地提出了采用源随器结构+传输线+并联有源偏置+负阻补偿网络+电流镜结构的电路拓扑，实现了超高Q值可调谐有源电感；(4) 新性地提出了采用多级电流镜反馈环路的电路结构，实现了恒Q值有源电感；（5）创新性地提出了采用了达林顿复合晶体管+交叉型复合电阻（替代单一反馈电阻）+可调的并联反馈有源电感+可调的峰化有源电感的可重配置超宽带放大器。本项目采用可调有源电感用于放大器设计的策略，不但可用于放大器的性能调节（重配置），也可用于集成电路调整补偿因工艺变化、封装寄生带来的增益和带宽退化情况，并且可极大节省芯片面积，这是采用无源电感进行放大器设计很难做到的，为高性能射频集成电路的设计提供了一个新途径。发表论文17篇，其中EI、SCI期刊和国际会议论文11篇，中文核心期刊论文6篇。2016授权国家发明专利7项，自2015年月至今，新申请国家发明专利3项。培养博士生3名，硕士毕业4名，在读硕士10名，本科生2名，博士后1名。培养青年教师2名。